Evidence map›Paper›PMID 40946193›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2025

A Floating-Gate Photoelectric Synaptic Transistor Utilizing BP/PO

Yuxuan Zeng, Wenxing Lv, Zehai Hou, Weihua Huang, Zhipeng Yu, Zishuo Han, Rongbin Zhan, Tianle Zeng, Yawen Luo, Yu Lin and 4 more

Abstract read
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Mimicking Pavlovian Conditioning with WSeACS applied materials & interfaces · 2026
    Article
  2. A Floating-Gate Photoelectric Synaptic Transistor Utilizing BP/POAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

14 authors.

Yuxuan ZengSchool of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China.ORCID https://orcid.org/0009-0007-9541-6840
Wenxing LvPhysics Laboratory, Industrial Training Center, Shenzhen Polytechnic University, Shenzhen, Guangdong, 518055, China.
Zehai HouSchool of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China.
Weihua HuangSchool of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China.
Zhipeng YuNanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China.
Zishuo HanNanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China.
Rongbin ZhanNanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China.
Tianle ZengNanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China.
Yawen LuoNanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China.
Yu LinNanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China.
Weiming LvNanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China.
Bin FangNanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China.
Zhongming ZengNanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China.ORCID https://orcid.org/0000-0001-7240-2058
Lianbo GuoSchool of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China.ORCID https://orcid.org/0000-0003-1038-8443

Funding

National Natural Science Foundation of China 52371206Program for Jiangsu Provincial Excellent Scientific and Technological Innovation Team 2023ZB005Shenzhen Science and Technology Program RCBS20210609103733072
6 · The paper itself

Abstract

Artificial intelligence (AI) is constrained by the high energy consumption of von Neumann architectures and the limited scalability of traditional silicon-based synapses. Two-dimensional (2D) van der Waals (vdW) materials, with their atomic-scale thickness, tunable electronic properties, and ease of heterogeneous integration, offer a promising platform for next-generation neuromorphic hardware. Here, the authors report a vdW floating-gate transistor (BP/PO

Indexed as

2D vdW materialsfloating‐gate transistorneuromorphic computingphotoelectronic synaptic device

Identifiers

PMID40946193
PMCPMC12677613

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.