The Material Growth and Characteristics of Transition Metal Oxide Thin Films Based on Hot Wire Oxidation Sublimation Deposition Technology.

Fengchao Li, Qingguo Kang, Zhenwei Kang, Tengteng Li, Jiangang Yu, Haibing Qiu, Ting Liang, Cheng Lei

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Article in Materials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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8 authors.

Fengchao LiSchool of Semiconductor and Physics, North University of China, Taiyuan 030051, China.

Qingguo KangSchool of Semiconductor and Physics, North University of China, Taiyuan 030051, China.

Zhenwei KangSchool of Semiconductor and Physics, North University of China, Taiyuan 030051, China.

Tengteng LiSchool of Semiconductor and Physics, North University of China, Taiyuan 030051, China.ORCID 0000-0001-5129-7455

Jiangang YuSchool of Semiconductor and Physics, North University of China, Taiyuan 030051, China.ORCID 0000-0002-1564-1631

Haibing QiuSchool of Semiconductor and Physics, North University of China, Taiyuan 030051, China.

Ting LiangSchool of Semiconductor and Physics, North University of China, Taiyuan 030051, China.

Cheng LeiSchool of Semiconductor and Physics, North University of China, Taiyuan 030051, China.ORCID 0000-0002-5592-3887

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6 · The paper itself

Abstract

Transition-metal oxides (TMOs) possess pronounced optoelectronic properties and are widely exploited in photovoltaics and photocatalysis. Here, we introduce a hot wire oxidation sublimation deposition (HWOSD) that directly converts elemental Mo and W into amorphous MoO

Indexed as

hole transport layershot wire oxidation sublimation depositionmaterial growthoptoelectronic characterizationtransition metal oxides

Identifiers

PMID40942509

DOI10.3390/ma18174083

PMCPMC12429527

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