Evidence map›Paper›PMID 40938015›Full record

ArticleNanomaterials (Basel, Switzerland)2025

Effects of Carrier Trapping and Noise in Triangular-Shaped GaN Nanowire Wrap-Gate Transistor.

Siva Pratap Reddy Mallem, Peddathimula Puneetha, Yeojin Choi, Mikiyas Mekete Mesheha, Manal Zafer, Kab-Seok Kang, Dong-Yeon Lee, Jaesool Shim, Ki-Sik Im, Sung Jin An

Abstract read
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In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

10 authors.

Siva Pratap Reddy MallemAdvanced Material Research Center, Kumoh National Institute of Technology, Gumi 39177, Republic of Korea.
Peddathimula PuneethaDepartment of Robotics and Intelligent Machine Engineering, College of Mechanical and IT Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea.
Yeojin ChoiDepartment of Materials Science and Engineering, Kumoh National Institute of Technology, Gumi 39177, Republic of Korea.ORCID 0009-0006-2023-5722
Mikiyas Mekete MeshehaDepartment of Materials Science and Engineering, Kumoh National Institute of Technology, Gumi 39177, Republic of Korea.
Manal ZaferDepartment of Materials Science and Engineering, Kumoh National Institute of Technology, Gumi 39177, Republic of Korea.
Kab-Seok KangDepartment of Electrical Engineering, Daegu Campus, Korea Polytechnics, Daegu 41765, Republic of Korea.
Dong-Yeon LeeDepartment of Robotics and Intelligent Machine Engineering, College of Mechanical and IT Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea.
Jaesool ShimSchool of Mechanical Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea.ORCID 0000-0001-6275-1879
Ki-Sik ImDepartment of Green Semiconductor System, Daegu Campus, Korea Polytechnics, Daegu 41765, Republic of Korea.
Sung Jin AnDepartment of Materials Science and Engineering, Kumoh National Institute of Technology, Gumi 39177, Republic of Korea.ORCID 0000-0002-5114-1933

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

The most widely used nanowire channel architecture for creating state-of-the-art high-performance transistors is the nanowire wrap-gate transistor, which offers low power consumption, high carrier mobility, large electrostatic control, and high-speed switching. The frequency-dependent capacitance and conductance measurements of triangular-shaped GaN nanowire wrap-gate transistors are measured in the frequency range of 1 kHz-1 MHz at room temperature to investigate carrier trapping effects in the core and at the surface. The performance of such a low-dimensional device is greatly influenced by its surface traps. With increasing applied frequency, the calculated trap density promptly decreases, from 1.01 × 10

Indexed as

core and surfaceGaNnanowiretrap effectswrap-gate transistor

Identifiers

PMID40938015
PMCPMC12430809

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.