Evidence map›Paper›PMID 40931548›Full record

ArticleAdvanced materials (Deerfield Beach, Fla.)2026

Li-Well ZnO Memtransistors: High Reliability for Neuromorphic Applications.

Ki-Hoon Son, Hyun-Sik Kim, Dae-Hee Han, Hyung-Kyu Lim, Hong-Sub Lee

Abstract read
In one paragraph

Article in Advanced materials (Deerfield Beach, Fla.), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Li-Well ZnO Memtransistors: High Reliability for Neuromorphic Applications.Advanced materials (Deerfield Beach, Fla.) · 2026
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

5 authors.

Ki-Hoon SonDepartment of Materials Science & Engineering, Kyung Hee University, Yongin, 17104, Republic of Korea.
Hyun-Sik KimDepartment of Materials Science & Engineering, Kyung Hee University, Yongin, 17104, Republic of Korea.
Dae-Hee HanDepartment of Materials Science & Engineering, Kyung Hee University, Yongin, 17104, Republic of Korea.
Hyung-Kyu LimDepartment of Chemical Engineering, Interdisciplinary Program in Advanced Functional Materials and Devices Development, Kangwon National University, 1 Kangwondaehak-gil, Chuncheon, Gangwon, 24341, Republic of Korea.
Hong-Sub LeeDepartment of Materials Science & Engineering, Kyung Hee University, Yongin, 17104, Republic of Korea.ORCID https://orcid.org/0000-0001-9605-8984

Funding

Gyeonggi-do Regional Research Center GRRCKYUNGHEE2023-B02National Research Foundation of Korea RS-2022-NR071829National Research Foundation of Korea RS-2024-00468995
6 · The paper itself

Abstract

Memtransistors are active analog memory devices utilizing ionic memristive materials as channel layers. Since their introduction, the term "memtransistor" has widely been adopted for transistors exhibiting nonvolatile memory characteristics. Currently, memtransistor devices possessing both transistor on/off functionality and nonvolatile memory characteristics include ferroelectric field-effect transistors (FeFETs) and charge-trap flash (floating gate), yet ionic memtransistors have not matched their performance. Here a facile and extendable lithium (Li)-well oxide memtransistor (LWOM) is reported as a promising candidate. Forming a Li well, analogous to an n

Indexed as

crossbar arrayhigh reliabilitylithium wellmemtransistoroxide semiconductor

Identifiers

PMID40931548
PMCPMC12759231

What OpenQuestion holds

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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.