Evidence map›Paper›PMID 40908991›Full record

ArticleRSC advances2025

Design optimization of mutual dissolution layer and diffusion interface layer in planar heterojunction near-infrared organic phototransistors for ultrahigh photosensitivity.

Tao Han, Yimin Zhang, Tianxia Li, Rui Jia, Qingpeng Lai, Bin Li, Suolin Wu, Xianhao Qian, Shufang Ding, Yaqi Chen and 1 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in RSC advances, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

11 authors.

Tao HanMicroelectronics and Optoelectronics Technology Key Laboratory of Hunan Higher Education, School of Physics and Electronic Electrical Engineering, Xiangnan University Chenzhou 423000 P. R. China than@xnu.edu.cn.ORCID https://orcid.org/0000-0002-2047-708X
Yimin ZhangMicroelectronics and Optoelectronics Technology Key Laboratory of Hunan Higher Education, School of Physics and Electronic Electrical Engineering, Xiangnan University Chenzhou 423000 P. R. China than@xnu.edu.cn.
Tianxia LiMicroelectronics and Optoelectronics Technology Key Laboratory of Hunan Higher Education, School of Physics and Electronic Electrical Engineering, Xiangnan University Chenzhou 423000 P. R. China than@xnu.edu.cn.
Rui JiaMicroelectronics and Optoelectronics Technology Key Laboratory of Hunan Higher Education, School of Physics and Electronic Electrical Engineering, Xiangnan University Chenzhou 423000 P. R. China than@xnu.edu.cn.
Qingpeng LaiMicroelectronics and Optoelectronics Technology Key Laboratory of Hunan Higher Education, School of Physics and Electronic Electrical Engineering, Xiangnan University Chenzhou 423000 P. R. China than@xnu.edu.cn.
Bin LiMicroelectronics and Optoelectronics Technology Key Laboratory of Hunan Higher Education, School of Physics and Electronic Electrical Engineering, Xiangnan University Chenzhou 423000 P. R. China than@xnu.edu.cn.
Suolin WuMicroelectronics and Optoelectronics Technology Key Laboratory of Hunan Higher Education, School of Physics and Electronic Electrical Engineering, Xiangnan University Chenzhou 423000 P. R. China than@xnu.edu.cn.
Xianhao QianMicroelectronics and Optoelectronics Technology Key Laboratory of Hunan Higher Education, School of Physics and Electronic Electrical Engineering, Xiangnan University Chenzhou 423000 P. R. China than@xnu.edu.cn.
Shufang DingMicroelectronics and Optoelectronics Technology Key Laboratory of Hunan Higher Education, School of Physics and Electronic Electrical Engineering, Xiangnan University Chenzhou 423000 P. R. China than@xnu.edu.cn.
Yaqi ChenMicroelectronics and Optoelectronics Technology Key Laboratory of Hunan Higher Education, School of Physics and Electronic Electrical Engineering, Xiangnan University Chenzhou 423000 P. R. China than@xnu.edu.cn.
Chunzhi JiangMicroelectronics and Optoelectronics Technology Key Laboratory of Hunan Higher Education, School of Physics and Electronic Electrical Engineering, Xiangnan University Chenzhou 423000 P. R. China than@xnu.edu.cn.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

The interfacial mutual solubility can result in a random distribution of donor and acceptor materials during the spin-coating step in the fabrication of planar heterojunction (PHJ) near-infrared (NIR) organic phototransistors. In this case, deep trap states are induced by acceptors, accelerating electron-hole recombination, ultimately impairing the photoresponsivity of the phototransistor. To solve this issue, a controllable mutual dissolution layer (formed by co-solvent treatment) combined with a diffusion interface layer (formed by the solvent vapor annealing (SVA) method) was introduced to achieve a more ordered arrangement of donors and acceptors, thereby enhancing the electrical performance of PHJ-based NIR phototransistors. Compared with a PDPP3T/PC

Identifiers

PMID40908991
PMCPMC12406118

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.