Large-Scale Implementation of Vertical Sidewall and Vertical Multi-Channel WS

Jiwon Ma, Eunyeong Yang, Changwook Lee, Jisoo Seok, Jiwon Chang

Abstract read

In one paragraph

Article in Small (Weinheim an der Bergstrasse, Germany), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it

0cells of the map it votes in

1citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

Large-Scale Implementation of Vertical Sidewall and Vertical Multi-Channel WSSmall (Weinheim an der Bergstrasse, Germany) · 2025
Article

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

5 authors.

Jiwon MaDepartment of System Semiconductor Engineering and Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, South Korea.ORCID https://orcid.org/0009-0008-4370-3845

Eunyeong YangDepartment of System Semiconductor Engineering and Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, South Korea.

Changwook LeeDepartment of System Semiconductor Engineering and Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, South Korea.

Jisoo SeokDepartment of System Semiconductor Engineering and Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, South Korea.

Jiwon ChangDepartment of System Semiconductor Engineering and Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, South Korea.ORCID https://orcid.org/0000-0003-0781-2522

Funding

Ministry of Science and ICT, South Korea NationalR&DProgram(RS-2023-00258309)Ministry of Science and ICT, South Korea NRF-2022R1A2C2008726

6 · The paper itself

Abstract

2D materials have emerged as promising candidates for next-generation field-effect transistors (FETs) owing to the atomically thin geometry and excellent electrostatic gate control. Here, double-gate vertical sidewall FETs based on chemical vapor deposition-grown monolayer WS

Indexed as

2D materialsarea‐efficient integrated circuitdouble‐gatemulti‐channel nanosheet field‐effect transistortungsten disulfidevertical channel field‐effect transistorvertical sidewall field‐effect transistor

Identifiers

PMID40898686

DOI10.1002/smll.202508533

PMCPMC12547997

What OpenQuestion holds

Textmetadata

LicenceCC BY

Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.