Evidence map›Paper›PMID 40885752›Full record

ArticleNature communications2025

Van der Waals β-Ga

Jing Ning, Zhichun Yang, Haidi Wu, Xinmeng Dong, Yaning Zhang, Yufei Chen, Xinbo Zhang, Dong Wang, Yue Hao, Jincheng Zhang

Abstract read
In one paragraph

Article in Nature communications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.

0numbers the graph read from it
0cells of the map it votes in
4citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

4 citing papers in PubMed.

  1. Review
  2. Defect-Polarization Coupling in 3D-Graphene/β-GaSmall (Weinheim an der Bergstrasse, Germany) · 2026
    Article
  3. Article
  4. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

10 authors.

Jing Ning *The State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Xi'an, China. ningj@xidian.edu.cn.ORCID http://orcid.org/0000-0002-3766-1158
Zhichun Yang *The State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Xi'an, China.
Haidi WuThe State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Xi'an, China.
Xinmeng DongThe State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Xi'an, China.
Yaning ZhangThe State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Xi'an, China.
Yufei ChenThe State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Xi'an, China.
Xinbo ZhangThe State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Xi'an, China.
Dong WangThe State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Xi'an, China.
Yue HaoThe State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Xi'an, China.
Jincheng ZhangThe State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Xi'an, China. jchzhang@xidian.edu.cn.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

The self-heating effect in wide bandgap semiconductor devices makes epitaxial Ga

Identifiers

PMID40885752
PMCPMC12398616

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.