Evidence map›Paper›PMID 40878430›Full record

ArticleSmall (Weinheim an der Bergstrasse, Germany)2025

Controlling Etch Anisotropy of Crystalline Germanium Nanostructures.

Khakimjon Saidov, Zainul Aabdin, Hongwei Yan, Antoine Pacco, Frank Holsteyns, Utkur Mirsaidov

Abstract read
In one paragraph

Article in Small (Weinheim an der Bergstrasse, Germany), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Controlling Etch Anisotropy of Crystalline Germanium Nanostructures.Small (Weinheim an der Bergstrasse, Germany) · 2025
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

6 authors.

Khakimjon SaidovDepartment of Physics, National University of Singapore, Singapore, 117551, Singapore.ORCID https://orcid.org/0000-0003-1809-4706
Zainul AabdinCenter for BioImaging Sciences and Department of Biological Sciences, National University of Singapore, Singapore, 117557, Singapore.
Hongwei YanDepartment of Physics, National University of Singapore, Singapore, 117551, Singapore.
Antoine PaccoIMEC, Kapeldreef 75, Leuven, B-3001, Belgium.
Frank HolsteynsIMEC, Kapeldreef 75, Leuven, B-3001, Belgium.
Utkur MirsaidovDepartment of Physics, National University of Singapore, Singapore, 117551, Singapore.ORCID https://orcid.org/0000-0001-8673-466X

Funding

National Research Foundation Singapore NRF-CRP23-2019-0001
6 · The paper itself

Abstract

Orientation-dependent wet chemical etching of crystalline germanium (c-Ge) is essential for the fabrication of next-generation complementary metal oxide semiconductor (CMOS) devices. Here, using a combination of conventional and in situ liquid-phase transmission electron microscopy (TEM) imaging, we reveal the details of the wet etching process of c-Ge nanostructures and identify critical parameters that control the etching rates along different crystalline directions. We demonstrate that etching behavior can be changed from isotropic to anisotropic etching (i.e., from crystal-orientation-independent to orientation-dependent etching) by introducing hydrochloric acid (HCl) into a commonly used hydrogen peroxide (H

Indexed as

etchinggermaniumin situ TEMnanofabricationsemiconductors

Identifiers

PMID40878430
PMCPMC12508700

What OpenQuestion holds

Textmetadata
LicenceCC BY-NC
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.