Impact of Rapid Thermal Annealing and Oxygen Concentration on Symmetry Bipolar Switching Characteristics of Tin Oxide-Based Memory Devices.

Kai-Huang Chen, Chien-Min Cheng, Ming-Cheng Kao, Hsin-Chin Chen, Yao-Chin Wang, Yu-Han Tsai

Abstract read

In one paragraph

Article in Micromachines, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it

0cells of the map it votes in

0citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

6 authors.

Kai-Huang ChenDepartment of Electronic Engineering, Cheng Shiu University, Kaohsiung 83347, Taiwan.ORCID 0000-0003-2367-5900

Chien-Min ChengDepartment of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 71005, Taiwan.

Ming-Cheng KaoGraduate Institute of Aeronautics, Department of Information and Communication Engineering, Chaoyang University of Technology, Taichung 413310, Taiwan.ORCID 0000-0001-6795-5774

Hsin-Chin ChenDepartment of Electronic Engineering, Cheng Shiu University, Kaohsiung 83347, Taiwan.

Yao-Chin WangDepartment of Electronic Engineering, Cheng Shiu University, Kaohsiung 83347, Taiwan.

Yu-Han TsaiDepartment of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 71005, Taiwan.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

In this study, tin oxide (SnO

Indexed as

electronic conduction mechanismI–Vresistance random-access memorysymmetry bipolar switchingthe tin oxide (SnO2)

Identifiers

PMID40872463

DOI10.3390/mi16080956

PMCPMC12388257

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.