ArticleMicromachines2025
Pre-Silicon Accurate SPICE Modeling of Trench MOSFETs via Advanced TCAD Simulations and Dynamic Validation.
Article in Micromachines, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Authors and funding
8 authors.
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Abstract
This work presents a novel and fully virtual flow for extracting the SPICE model of a power MOSFET, starting exclusively from TCAD simulations. Unlike traditional approaches that rely on experimental silicon data, our methodology enables designers to optimize the device performance and extract accurate electrical parameters before any physical prototyping is required. By leveraging advanced TCAD tools, we generate a realistic device structure and obtain all the key electrical characteristics, which are then used for precise SPICE model extraction and macromodel integration. The extracted model is dynamically validated using a gate-charge test performed identically in both the TCAD and SPICE environments, demonstrating excellent agreement with less than a 2% error in the charge quantities, Q
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