Investigating Surface Morphology and Subsurface Damage Evolution in Nanoscratching of Single-Crystal 4H-SiC.

Single-crystal 4H silicon carbide (4H-SiC) is a key substrate material for third-generation semiconductor devices, where surface and subsurface integrity critically affect performance and reliability. This study systematically examined the evolution of surface morphology and subsurface damage (SSD) during nanoscratching of 4H-SiC under varying normal loads (0-100 mN) using a nanoindenter equipped with a diamond Berkovich tip. Scratch characteristics were assessed using scanning electron microscopy (SEM), while cross-sectional SSD was characterised via focused ion beam (FIB) slicing and transmission electron microscopy (TEM). The results revealed three distinct material removal regimes: ductile removal below 14.5 mN, a brittle-to-ductile transition between 14.5-59.3 mN, and brittle removal above 59.3 mN. Notably, substantial subsurface damage-including median cracks exceeding 4 μm and dislocation clusters-was observed even within the transition zone where the surface appeared smooth. A thin amorphous layer at the indenter-substrate interface suppressed immediate surface defects but promoted subsurface damage nucleation. Crack propagation followed slip lines or their intersections, demonstrating sensitivity to local stress states. These findings offer important insights into nanoscale damage mechanisms, which are essential for optimizing precision machining processes to minimise SSD in SiC substrates.