Evidence map›Paper›PMID 40872388›Full record

ReviewMicromachines2025

A Review of Tunnel Field-Effect Transistors: Materials, Structures, and Applications.

Shupeng Chen, Yourui An, Shulong Wang, Hongxia Liu

Abstract readReview
In one paragraph

Review in Micromachines, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Article
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

4 authors.

Shupeng ChenKey Laboratory of Wide Bandgap Semiconductor Materials, Faculty of Integrated Circuit, Ministry of Education, Xidian University, Xi'an 710071, China.ORCID 0000-0002-6220-7061
Yourui AnKey Laboratory of Wide Bandgap Semiconductor Materials, Faculty of Integrated Circuit, Ministry of Education, Xidian University, Xi'an 710071, China.ORCID 0009-0001-8055-8906
Shulong WangKey Laboratory of Wide Bandgap Semiconductor Materials, Faculty of Integrated Circuit, Ministry of Education, Xidian University, Xi'an 710071, China.ORCID 0000-0002-8560-2478
Hongxia LiuKey Laboratory of Wide Bandgap Semiconductor Materials, Faculty of Integrated Circuit, Ministry of Education, Xidian University, Xi'an 710071, China.ORCID 0000-0003-4547-0666

Funding

National Natural Science Foundation of China U2241221
6 · The paper itself

Abstract

The development of an integrated circuit faces the challenge of the physical limit of Moore's Law. One of the most important "Beyond Moore" challenges is the scaling down of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) versus their increasing static power consumption. This is because, at room temperature, the thermal emission transportation mechanism will cause a physical limitation on subthreshold swing (

Indexed as

band-to-band tunneling (BTBT)subthreshold swing (SS)tunnel field-effect transistor (TFET)ultra-low-power electronics

Identifiers

PMID40872388
PMCPMC12388682

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.