ArticleMaterials (Basel, Switzerland)2025
Filamentary Resistive Switching Mechanism in CuO Thin Film-Based Memristor.
Article in Materials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
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2 citing papers in PubMed.
- Study on Electrical Behavior of TiONanomaterials (Basel, Switzerland) · 2026Article
- Article
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5 authors.
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Abstract
Understanding the resistive switching (RS) mechanisms in memristive devices is crucial for developing non-volatile memory technologies. Here, we investigate the memristor effect in hydrothermally grown Au-nanoseeded CuO films. Based on I-V measurements, conductive-AFM, S/TEM, and EDS analyses, we examine the changes within the switching layer associated with RS. Our results reveal a filamentary mechanism of RS. Notably, EDS mapping shows directional Au redistribution between the bottom nanoseeds and the top electrode, while Cu and O remain uniformly distributed. These findings support an electrochemical metallization (ECM)-like filamentary mechanism driven by Au species migration. The use of Au-nanoseeds, required by the solution-based growth method, critically affects filament formation and RS behavior. Our results emphasize the importance of microstructure and electrode-oxide interfaces in determining the switching mechanism in oxide-based memristors.
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