Selective DUV Femtosecond Laser Annealing for Electrical Property Modulation in NMOS Inverter.

Joo Hyun Jeong, Won Woo Lee, Sang Jik Kwon, Min-Kyu Park, Eou-Sik Cho

Abstract read

In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it

0cells of the map it votes in

0citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

5 authors.

Joo Hyun JeongDepartment of Semiconductor Engineering, Gachon University, Seongnam City 13120, Republic of Korea.

Won Woo LeeDepartment of Semiconductor Engineering, Gachon University, Seongnam City 13120, Republic of Korea.

Sang Jik KwonDepartment of Electronic Engineering, Gachon University, Seongnam City 13120, Republic of Korea.ORCID 0000-0002-6860-9037

Min-Kyu ParkDepartment of Semiconductor Engineering, Gachon University, Seongnam City 13120, Republic of Korea.ORCID 0000-0002-1426-1944

Eou-Sik ChoDepartment of Semiconductor Engineering, Gachon University, Seongnam City 13120, Republic of Korea.ORCID 0000-0002-8145-3516

Funding

Korea Institute for Advancement of Technology RS-2025-02263458National Research Foundation of Korea NRF-2020R1F1A1076505

6 · The paper itself

Abstract

Amorphous indium gallium zinc oxide (a-IGZO) is widely used as an oxide semiconductor in the electronics industry due to its low leakage current and high field-effect mobility. However, a-IGZO suffers from notable limitations, including crystallization at temperatures above 600 °C and the high cost of indium. To address these issues, nitrogen-doped zinc oxynitride (ZnON), which can be processed at room temperature, has been proposed. Nitrogen in ZnON effectively reduces oxygen vacancies (V

Indexed as

deep ultraviolet femtosecond (DUV fs) laser annealingNMOS inverterthin film transistor (TFT)zinc oxynitride (ZnON)

Identifiers

PMID40863826

DOI10.3390/nano15161247

PMCPMC12388412

What OpenQuestion holds

Textmetadata

LicenceCC BY

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.