Evidence map›Paper›PMID 40859415›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2025

Monolithically-Integrated van der Waals Synaptic Memory via Bulk Nano-Crystallization.

Jinhyoung Lee, Gunhyoung Kim, Hyunho Seok, Sujeong Han, Hyunwoo Shim, Yoonmi Cha, Sihoon Son, Hyunbin Choi, Magdalena Grzeszczyk, Aleksander Bogucki and 25 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.

0numbers the graph read from it
0cells of the map it votes in
3citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

3 citing papers in PubMed.

  1. Designable van der Waals Crystal for Artificial Neuronal Cell Mimicking.Advanced materials (Deerfield Beach, Fla.) · 2026
    Article
  2. Article
  3. Monolithically-Integrated van der Waals Synaptic Memory via Bulk Nano-Crystallization.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

35 authors.

Jinhyoung LeeSchool of Mechanical Engineering, Sungkyunkwan University (SKKU), Suwon-si, Gyeonggi-do, 16419, South Korea.
Gunhyoung KimDepartment of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon, 16419, South Korea.
Hyunho SeokResearch Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
Sujeong HanDepartment of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon, 16419, South Korea.
Hyunwoo ShimDepartment of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon, 16419, South Korea.
Yoonmi ChaPark Systems Corporation, 109, Gwanggyo-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16229, South Korea.
Sihoon SonSKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea.
Hyunbin ChoiDepartment of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon, 16419, South Korea.
Magdalena GrzeszczykCenter for Quantum Nanoscience, Institute for Basic Science (IBS), Seoul, 03760, South Korea.
Aleksander BoguckiCenter for Quantum Nanoscience, Institute for Basic Science (IBS), Seoul, 03760, South Korea.
Yunseok ChoiDepartment of Mechanical Engineering and Materials Science and Institute of Materials Science and Engineering, Washington University in St. Louis, Missouri, MO, 63130, USA.
Seungil KimDepartment of Mechanical Engineering and Materials Science and Institute of Materials Science and Engineering, Washington University in St. Louis, Missouri, MO, 63130, USA.
Hyeonjeong LeeSchool of Mechanical Engineering, Sungkyunkwan University (SKKU), Suwon-si, Gyeonggi-do, 16419, South Korea.
Chaerin ParkDepartment of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon, 16419, South Korea.
Geonwook KimSchool of Mechanical Engineering, Sungkyunkwan University (SKKU), Suwon-si, Gyeonggi-do, 16419, South Korea.
Hosin HwangDepartment of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon, 16419, South Korea.
Hyunho KimDepartment of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon, 16419, South Korea.
Dongho LeeSchool of Mechanical Engineering, Sungkyunkwan University (SKKU), Suwon-si, Gyeonggi-do, 16419, South Korea.
Seowoo SonSKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea.
Geumji BackDepartment of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon, 16419, South Korea.
Hyelim ShinDepartment of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon, 16419, South Korea.
Donghwan ChoiDepartment of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon, 16419, South Korea.
Alexina OllierCenter for Quantum Nanoscience, Institute for Basic Science (IBS), Seoul, 03760, South Korea.
Yeon-Ji KimCenter for Quantum Nanoscience, Institute for Basic Science (IBS), Seoul, 03760, South Korea.
Lei FangCenter for Quantum Nanoscience, Institute for Basic Science (IBS), Seoul, 03760, South Korea.
Gyuho HanPark Systems Corporation, 109, Gwanggyo-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16229, South Korea.
Goo-Eun JungPark Systems Corporation, 109, Gwanggyo-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16229, South Korea.
Youngi LeePark Systems Corporation, 109, Gwanggyo-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16229, South Korea.
Hyeong-U KimSemiconductor Manufacturing Research Center, Korea Institute of Machinery and Materials (KIMM), Daejeon, 34103, South Korea.
Kenji WatanabeNational Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki, 305-0044, Japan.
Takashi TaniguchiNational Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki, 305-0044, Japan.
Sanghoon BaeDepartment of Mechanical Engineering and Materials Science and Institute of Materials Science and Engineering, Washington University in St. Louis, Missouri, MO, 63130, USA.
Andreas HeinrichCenter for Quantum Nanoscience, Institute for Basic Science (IBS), Seoul, 03760, South Korea.
Won-Jun JangCenter for Quantum Nanoscience, Institute for Basic Science (IBS), Seoul, 03760, South Korea.
Taesung KimSchool of Mechanical Engineering, Sungkyunkwan University (SKKU), Suwon-si, Gyeonggi-do, 16419, South Korea.ORCID https://orcid.org/0000-0001-6280-7668

Funding

Institute for Basic Science IBS-R027-D1Korea Semiconductor Research Consortium RS-2023-00235156Ministry of Trade, Industry and Energy 1415187508Ministry of Trade, Industry and Energy 1415187584MOTIE 1415187508MOTIE 1415187584MSIT RS-2024-00437142National Research FoundationNational Research Foundation of Korea RS-2024-00437142Technology Innovation Program 20017367
6 · The paper itself

Abstract

Owing to the evolution of data-driven technologies, including the large language models, generative artificial intelligence, autonomous driving, and the internet of things requires advanced memory technology. However, conventional memory device structures and fabrication process have significant limitations for high-density integration. Herein, this study reports the monolithically-integrated 1-selector and 1-resistive (1S1R) synaptic memory in van der Waals (vdW) heterostructure, which overcomes the conventional limitations of device integration technologies. Single-step direct synthesis of vdW heterostructure and its corresponding 1S1R cell is fabricated via plasma-enhanced lattice-distortion. Scanning-transmission electron microscopy, and X-ray photoelectron spectroscopy are correlatively applied to observe the effects of plasma-enhanced nano-crystallization of bulk vdW VSe

Indexed as

1S1R cell2D/3D heterostructuresatomic force microscopyresistive switchingsynaptic memory

Identifiers

PMID40859415
PMCPMC12631876

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.