ArticleSmall (Weinheim an der Bergstrasse, Germany)2025
Scalable Inter-Dielectric Engineering via Vapor-Phase Synthesis Process for Top-Gate MoS
Article in Small (Weinheim an der Bergstrasse, Germany), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
3 citing papers in PubMed.
- Barrier-Assisted Plasma Doping for Spatially Selective Resistance Engineering in MoSAdvanced materials (Deerfield Beach, Fla.) · 2026Article
- Dielectric stacking-engineered scalable reconfigurable transistor platform for adaptive logic circuits.Nature communications · 2026Article
- Scalable Inter-Dielectric Engineering via Vapor-Phase Synthesis Process for Top-Gate MoSSmall (Weinheim an der Bergstrasse, Germany) · 2025Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
12 authors.
Funding
Abstract
2D semiconductors are promising channel materials for next-generation thin-film transistors (TFTs) in Internet of Things (IoT) devices. However, their inert, dangling-bond-free surfaces make uniform high-k dielectric integration challenging and can lead to interface defect formation. Here, a scalable inter-dielectric engineering strategy is introduced to address this challenge, using initiated chemical vapor deposition (iCVD) to deposit an ultrathin nonpolar poly(1,3,5-trimethyl-1,3,5-trivinylcyclotrisiloxane) (pV3D3) film as an interlayer between MoS
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.