Evidence map›Paper›PMID 40855647›Full record

ArticleAdvanced materials (Deerfield Beach, Fla.)2025

Brain-Inspired In-Memory Data Pruning and Computing with TaO

Yi Li, Jinru Lai, Songqi Wang, Ning Lin, Xu Zheng, Wenxuan Sun, Danian Dong, Xiqing Xu, Haili Ma, Feng Zhang and 6 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Advanced materials (Deerfield Beach, Fla.), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Brain-Inspired In-Memory Data Pruning and Computing with TaOAdvanced materials (Deerfield Beach, Fla.) · 2025
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

16 authors.

Yi LiDepartment of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong SAR, 999077, China.
Jinru LaiState Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, 100029, China.
Songqi WangDepartment of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong SAR, 999077, China.
Ning LinDepartment of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong SAR, 999077, China.
Xu ZhengState Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, 100029, China.
Wenxuan SunState Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, 100029, China.
Danian DongState Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, 100029, China.
Xiqing XuSchool of Materials Science and Engineering, Chang'an University, Xi'an, 710061, China.
Haili MaInstitute of Microelectronics of the Chinese Academy of Sciences, Beijing, 100029, China.
Feng ZhangState Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, 100029, China.
Xiaojuan QiDepartment of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong SAR, 999077, China.
Zhongrui WangSchool of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China.ORCID https://orcid.org/0000-0003-2264-0677
Xiaoxin XuState Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, 100029, China.
Dashan ShangState Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, 100029, China.
Han WangDepartment of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong SAR, 999077, China.
Ming LiuState Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, 100029, China.

Funding

Hong Kong Innovation and Technology Fund ITP/048/22APHong Kong Research Grant Council 17212923Hong Kong Research Grant Council AoE/E-101/23-NHong Kong Research Grant Council C7003-24YNational Natural Science Foundation of China 62322412National Natural Science Foundation of China 62374181National Natural Science Foundation of China 62488101Shenzhen Science and Technology Innovation Commission SGDX20220530111405040Youth Innovation Promotion Association CAS
6 · The paper itself

Abstract

The selective attention mechanisms inherent in the human visual system provide a promising framework for developing edge systems that can simultaneously prune and process critical information from visual input. However, conventional complementary metal-oxide-semiconductor-based edge vision systems rely on complex digital logic for data pruning, alongside the physical separation of pruning, memory, and processing. This increases both power consumption and latency. Herein, a Mem-Selector (M-S) device that features reconfigurable non-volatile resistive memory and volatile threshold switching in a Ta/TaO

Indexed as

data pruningin‐memory computingmemristorneuromorphic computing

Identifiers

PMID40855647
PMCPMC12574655

What OpenQuestion holds

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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.