Evidence map›Paper›PMID 40849296›Full record

ArticleNature communications2025

Bilateral Geiger mode avalanche in InSe Schottky photodiodes.

Dongyang Zhao, Yan Chen, Tao Hu, Hechun Cao, Xuefeng Zhao, Yu Jia, Xudong Wang, Hong Shen, Jing Yang, Yuanyuan Zhang and 4 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nature communications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Dielectric function of layered GaSeScientific reports · 2026
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

14 authors.

Dongyang ZhaoShanghai Frontier Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, P. R. China.
Yan ChenShanghai Frontier Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, P. R. China. yanchen_@fudan.edu.cn.ORCID http://orcid.org/0009-0000-4076-867X
Tao HuKey Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, P. R. China.
Hechun CaoKey Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, P. R. China.
Xuefeng ZhaoKey Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, P. R. China.
Yu JiaKey Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, P. R. China.
Xudong WangState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No.500 Yutian Road, Shanghai, 200083, P. R. China. wxd0130@mail.sitp.ac.cn.ORCID http://orcid.org/0000-0002-0261-6736
Hong ShenState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No.500 Yutian Road, Shanghai, 200083, P. R. China.ORCID http://orcid.org/0000-0001-6283-6506
Jing YangKey Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, P. R. China.
Yuanyuan ZhangKey Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, P. R. China.
Xiaodong TangKey Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, P. R. China.
Wei BaiShanghai Frontier Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, P. R. China. wbai@ee.ecnu.edu.cn.ORCID http://orcid.org/0000-0002-1298-8787
Jianlu WangShanghai Frontier Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, P. R. China.
Junhao ChuShanghai Frontier Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, P. R. China.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Avalanche photodiodes are crucial in emerging weak light signal detection fields. However, most avalanche photodiodes either suffer from relatively high breakdown voltage or relatively low gain, impairing the advantages of avalanche multiplication. Herein, we report the bilateral Geiger mode avalanche in two-dimensional Graphene/InSe/Cr asymmetrical Schottky junction. A high gain of 6.3 × 10

Identifiers

PMID40849296
PMCPMC12375121

What OpenQuestion holds

Textmetadata
LicenceCC BY-NC-ND
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.