Evidence map›Paper›PMID 40839862›Full record

ArticleACS applied materials & interfaces2025

Binary B-Te Selectors Reinvented: Confined Conductive Paths Unlock Superior Ovonic Threshold Switching.

Hoedon Kwon, Kwangsik Jeong, Yeonwoo Seong, Gihyeon Kwon, Hyeon-Sik Kim, Hyeonwook Lim, Changwoo Lee, Dajung Kim, Hojun Lee, Mann-Ho Cho

Abstract read
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Article in ACS applied materials & interfaces, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
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1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

10 authors.

Hoedon KwonDepartment of Physics, Yonsei University, Seoul 03722, Republic of Korea.
Kwangsik JeongDivision of AI Semiconductor, Yonsei University, Wonju, Gangwon-do 26493, Republic of Korea.ORCID 0000-0002-2804-7092
Yeonwoo SeongDepartment of Physics, Yonsei University, Seoul 03722, Republic of Korea.
Gihyeon KwonDepartment of Physics, Yonsei University, Seoul 03722, Republic of Korea.
Hyeon-Sik KimDepartment of Physics, Yonsei University, Seoul 03722, Republic of Korea.
Hyeonwook LimDepartment of Physics, Yonsei University, Seoul 03722, Republic of Korea.
Changwoo LeeDepartment of Physics, Yonsei University, Seoul 03722, Republic of Korea.
Dajung KimDepartment of Physics, Yonsei University, Seoul 03722, Republic of Korea.
Hojun LeeDepartment of Physics, Yonsei University, Seoul 03722, Republic of Korea.
Mann-Ho ChoDepartment of Physics, Yonsei University, Seoul 03722, Republic of Korea.ORCID 0000-0002-5621-3676

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

While Te-based ovonic threshold switching (OTS) materials offer advantages such as low-voltage operation and fast switching speed, their relatively low crystallization temperature compared to S- or Se-based counterparts results in poor thermal stability and limited electrical endurance. Various strategies, including element doping and complex composition design, have been explored to address these limitations. In this study, the OTS device properties of B

Indexed as

boron telluridechalcogenideOTS selectorovonic threshold switchingselector

Identifiers

PMID40839862
PMCPMC12412531

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.