Evidence map›Paper›PMID 40838358›Full record

ArticleAdvanced materials (Deerfield Beach, Fla.)2025

Proximity-Induced Ferroelectric Switching in Wurtzite/Fluorite Bilayers for High-Performance Ferroelectric Field-Effect Transistor.

Kyung Do Kim, Min Kyu Yeom, Han Sol Park, Gwangsik Jeon, Cheol Seong Hwang

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Advanced materials (Deerfield Beach, Fla.), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Article
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

5 authors.

Kyung Do KimDepartment of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, South Korea.
Min Kyu YeomDepartment of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, South Korea.
Han Sol ParkDepartment of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, South Korea.
Gwangsik JeonDepartment of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, South Korea.
Cheol Seong HwangDepartment of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, South Korea.ORCID https://orcid.org/0000-0002-6254-9758

Funding

National Research Foundation of Korea 2020R1A3B2079882
6 · The paper itself

Abstract

Proximity ferroelectricity, wherein polarization switching in one ferroelectric layer with a lower energy barrier can trigger switching in an adjacent ferroelectric with a higher energy barrier, has been demonstrated only in bilayers composed of structurally similar wurtzite-structured materials. This work demonstrates proximity-induced ferroelectric switching across a heterostructure composed of crystallographically and functionally dissimilar materials, wurtzite-structured AlScN and fluorite-structured HfZrO

Indexed as

aluminum scandium nitrideferroelectricferroelectric field‐effect transistorshafnium zirconium oxideheterostructureproximity ferroelectricity

Identifiers

PMID40838358
PMCPMC12617061

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.