Evidence map›Paper›PMID 40790120›Full record

ArticleNature communications2025

Revisiting the role of oxidation in stable and high-performance lead-free perovskite-IGZO junction field-effect transistors.

Seonkwon Kim, Su Hyun Kim, Hui Ung Hwang, Jeongmin Kim, Jeong Won Kim, In Cheol Kwak, Byeongjae Kang, Seungjae Lee, Sae Byeok Jo, Du Yeol Ryu and 5 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nature communications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

15 authors.

Seonkwon KimDepartment of Chemical and Biomolecular Engineering, Yonsei University, Seoul, Republic of Korea.
Su Hyun KimDepartment of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Republic of Korea.ORCID http://orcid.org/0009-0001-3885-3370
Hui Ung HwangKorea Research Institute of Standards and Science (KRISS), Daejeon, Republic of Korea.
Jeongmin KimDivision of Nanotechnology, DGIST, Daegu, Republic of Korea.
Jeong Won KimKorea Research Institute of Standards and Science (KRISS), Daejeon, Republic of Korea.ORCID http://orcid.org/0000-0002-5881-9911
In Cheol KwakDepartment of Chemical and Biomolecular Engineering, Yonsei University, Seoul, Republic of Korea.ORCID http://orcid.org/0000-0001-5421-7721
Byeongjae KangDepartment of Physics, Center for Ultrafast Phase Transformation, Sogang University, Seoul, Republic of Korea.ORCID http://orcid.org/0009-0001-1620-4898
Seungjae LeeDepartment of Chemical and Biomolecular Engineering, Yonsei University, Seoul, Republic of Korea.
Sae Byeok JoSchool of Chemical Engineering, Sungkyunkwan University (SKKU), Suwon, Republic of Korea.ORCID http://orcid.org/0000-0001-7383-3546
Du Yeol RyuDepartment of Chemical and Biomolecular Engineering, Yonsei University, Seoul, Republic of Korea.ORCID http://orcid.org/0000-0002-0929-7934
Hyunjung KimDepartment of Physics, Center for Ultrafast Phase Transformation, Sogang University, Seoul, Republic of Korea.ORCID http://orcid.org/0000-0001-6211-4888
Jae-Min MyoungDepartment of Materials Science and Engineering, Yonsei University, Seoul, Republic of Korea.ORCID http://orcid.org/0000-0003-4724-0653
Moon Sung KangDepartment of Chemical and Biomolecular Engineering, Sogang University, Seoul, Republic of Korea. kangms@sogang.ac.kr.ORCID http://orcid.org/0000-0003-0491-5032
Saeroonter OhDepartment of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon, Republic of Korea. sroonter@skku.edu.ORCID http://orcid.org/0000-0003-4281-6879
Jeong Ho ChoDepartment of Chemical and Biomolecular Engineering, Yonsei University, Seoul, Republic of Korea. jhcho94@yonsei.ac.kr.ORCID http://orcid.org/0000-0002-1030-9920

Funding

Samsung SRFC-MA1901-52
6 · The paper itself

Abstract

Mitigating the oxidation susceptibility of Sn remains a critical issue for improving the environmental stability of lead-free perovskites. Herein, we show that the oxidized surface layer of Sn-based perovskites can be utilized to improve transistor performance, rather than being entirely suppressed. We report perovskite-IGZO junction field-effect transistors that use this oxidized layer to suppress gate current to below 10

Identifiers

PMID40790120
PMCPMC12339744

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.