Evidence map›Paper›PMID 40789924›Full record

ArticleNature nanotechnology2025

Ultrabroadband nonlinear Hall rectifier using SnTe.

Fanrui Hu, Pengnan Zhao, Lihuan Yang, Shishun Zhao, Jiayu Lei, Weijian Li, Jiamin Lai, Zhonghai Yu, Hanbum Park, Chengquan Wong and 6 more

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Article in Nature nanotechnology, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.

0numbers the graph read from it
0cells of the map it votes in
3citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

3 citing papers in PubMed.

  1. Article
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4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

16 authors.

Fanrui Hu *Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore.ORCID http://orcid.org/0009-0002-5745-9579
Pengnan Zhao *Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education & School of Chemistry and Materials Science, Shanxi Normal University, Taiyuan, China.
Lihuan Yang *Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education & School of Chemistry and Materials Science, Shanxi Normal University, Taiyuan, China.
Shishun ZhaoDepartment of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore.
Jiayu LeiDepartment of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore.ORCID http://orcid.org/0000-0002-9922-800X
Weijian LiInstitute of Applied Physics and Materials Engineering, University of Macau, Macau, China.ORCID http://orcid.org/0000-0003-4477-4860
Jiamin LaiKey Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education & School of Chemistry and Materials Science, Shanxi Normal University, Taiyuan, China.ORCID http://orcid.org/0009-0001-5700-5385
Zhonghai YuKey Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education & School of Chemistry and Materials Science, Shanxi Normal University, Taiyuan, China.
Hanbum ParkDepartment of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore.ORCID http://orcid.org/0000-0002-0020-9328
Chengquan WongDepartment of Physics, National University of Singapore, Singapore, Singapore.ORCID http://orcid.org/0009-0001-1693-6191
Raghav SharmaDepartment of Electrical Engineering, Indian Institute of Technology Ropar, Rupnagar, India.ORCID http://orcid.org/0000-0003-3451-3253
Goki EdaDepartment of Physics, National University of Singapore, Singapore, Singapore.ORCID http://orcid.org/0000-0002-1575-8020
Shengyuan A YangInstitute of Applied Physics and Materials Engineering, University of Macau, Macau, China.
Xiaohong XuKey Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education & School of Chemistry and Materials Science, Shanxi Normal University, Taiyuan, China.ORCID http://orcid.org/0000-0001-7588-4793
Fei WangKey Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education & School of Chemistry and Materials Science, Shanxi Normal University, Taiyuan, China. feiwang.imr@gmail.com.ORCID http://orcid.org/0000-0003-3801-2819
Hyunsoo YangDepartment of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore. eleyang@nus.edu.sg.ORCID http://orcid.org/0000-0003-0907-2898

Funding

National Natural Science Foundation of China (National Science Foundation of China) 12174237National Natural Science Foundation of China (National Science Foundation of China) 52471253National Research Foundation Singapore (National Research Foundation-Prime Minister's office, Republic of Singapore) NRFI06-2020-0015
6 · The paper itself

Abstract

The rapid expansion of self-powered electronics in the Internet of Things, 6G communication and millimetre-wave systems calls for rectifiers capable of operating across ultrabroadband frequencies and at extremely low input power levels. However, conventional rectifiers based on semiconductor junctions face fundamental limitations such as parasitic capacitance and threshold voltages, preventing effective operation under broadband and ambient radio-frequency conditions. Here we present an ultrabroadband, zero-bias rectifier based on the nonlinear Hall effect in wafer-scale (001)-oriented topological crystalline insulator SnTe thin film. This material exhibits a large second-order conductivity of ~0.004 Ω⁻

Identifiers

PMID40789924

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.