Evidence map›Paper›PMID 40774654›Full record

ArticleNano letters2025

Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices.

Sofía Cruces, Mohit D Ganeriwala, Jimin Lee, Ke Ran, Janghyun Jo, Lukas Völkel, Dennis Braun, Bárbara Canto, Enrique G Marín, Holger Kalisch and 7 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nano letters, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

17 authors.

Sofía CrucesChair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany.ORCID 0000-0003-2816-7016
Mohit D GaneriwalaDepartment of Electronics and Computer Technology, Facultad de Ciencias, Universidad de Granada, 18071 Granada, Spain.ORCID 0000-0003-4682-3435
Jimin LeeChair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany.ORCID 0000-0002-5877-6958
Ke RanAMO GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany.ORCID 0000-0002-9762-4586
Janghyun JoErnst Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C), Forschungszentrum Jülich GmbH, Wilhelm-Johnen-Str., 52425 Jülich, Germany.ORCID 0009-0003-5252-8755
Lukas VölkelChair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany.ORCID 0000-0002-8138-9980
Dennis BraunChair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany.ORCID 0000-0003-2803-1784
Bárbara CantoAMO GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany.ORCID 0000-0001-5885-9852
Enrique G MarínDepartment of Electronics and Computer Technology, Facultad de Ciencias, Universidad de Granada, 18071 Granada, Spain.
Holger KalischCompound Semiconductor Technology, RWTH Aachen University, Sommerfeldstr. 18, 52074 Aachen, Germany.
Michael HeukenCompound Semiconductor Technology, RWTH Aachen University, Sommerfeldstr. 18, 52074 Aachen, Germany.
Andrei VescanCompound Semiconductor Technology, RWTH Aachen University, Sommerfeldstr. 18, 52074 Aachen, Germany.ORCID 0000-0001-9465-2621
Rafal E Dunin-BorkowskiErnst Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C), Forschungszentrum Jülich GmbH, Wilhelm-Johnen-Str., 52425 Jülich, Germany.ORCID 0000-0001-8082-0647
Joachim MayerCentral Facility for Electron Microscopy, RWTH Aachen University, Ahornstr. 55, 52074 Aachen, Germany.ORCID 0000-0003-3292-5342
Andrés GodoyDepartment of Electronics and Computer Technology, Facultad de Ciencias, Universidad de Granada, 18071 Granada, Spain.ORCID 0000-0002-3014-8765
Alwin DausInstitute of Semiconductor Engineering, University of Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany.ORCID 0000-0001-7461-3756
Max C LemmeChair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany.ORCID 0000-0003-4552-2411

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Developing electronic devices capable of emulating biological functions is essential for advancing brain-inspired computation paradigms such as neuromorphic computing. In recent years, two-dimensional materials have emerged as promising candidates for neuromorphic electronic devices. This work addresses the coexistence of volatile and nonvolatile resistive switching in lateral memristors based on molybdenum disulfide with silver as the active electrode. The fabricated devices exhibited switching voltages of ∼0.16 V and ∼0.52 V for volatile and nonvolatile operation, respectively, under direct-current measurements. They also displayed the essential synaptic functions of paired-pulse facilitation and short- and long-term plasticity under pulse stimulation. The operation mechanism was investigated by

Indexed as

ion migrationlateral memristormolybdenum disulfidenonvolatileresistive switchingvolatile

Identifiers

PMID40774654
PMCPMC12371877

What OpenQuestion holds

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LicenceCC BY-NC-ND
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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.