ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2025
Flexible Memory Application of Nanoscale Ti-Ge-Te Thin Film as Information Storage Medium With Excellent Thermal Stability, Low Resistance Drift and Superior Bending Characteristic.
Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
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Who cites it
1 citing paper in PubMed.
- Flexible Memory Application of Nanoscale Ti-Ge-Te Thin Film as Information Storage Medium With Excellent Thermal Stability, Low Resistance Drift and Superior Bending Characteristic.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Article
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8 authors.
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Abstract
The flexible Ti-Ge-Te phase change material was proposed and fabricated by magnetron cosputtering method. The impact of titanium dopant and mechanical bending on the thermal stability, electrical resistance, surface morphology, microstructure, and crystallization mechanism of GeTe thin film are investigated systematically. With the incorporation of appropriate titanium dopant, the crystallization process and grain size of GeTe material can be hindered. Meanwhile, the thermal stability, surface morphology, and crystal structure have not been changed obviously when the bending times reaching 10
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