Article in Science advances, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
2 · The registry
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
5 · Who and what money
Authors and funding
21 authors.
Yan YanDepartment of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR 999077, P.R. China.ORCID 0009-0007-4867-904X
Xiongyi LiangDepartment of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR 999077, P.R. China.ORCID 0000-0001-6182-6189
Liqiang WangDepartment of Mechanical Engineering, City University of Hong Kong, Hong Kong SAR 999077, P.R. China.ORCID 0000-0002-3998-7004
Yuxuan ZhangDepartment of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR 999077, P.R. China.ORCID 0000-0002-5240-6606
Jiaming ZhouDepartment of Mechanical Engineering, The University of Hong Kong, Hong Kong SAR 999077, P.R. China.
Weijun WangDepartment of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR 999077, P.R. China.ORCID 0000-0002-2796-5844
Zhibo ZhangDepartment of Mechanical Engineering, City University of Hong Kong, Hong Kong SAR 999077, P.R. China.
Yu ZhouDepartment of Electronic & Computer Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong SAR, P.R. China.ORCID 0000-0001-7233-4649
Irum FirdousDepartment of Mechanical Engineering, City University of Hong Kong, Hong Kong SAR 999077, P.R. China.ORCID 0000-0001-6298-5384
Zhengxun LaiChangsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China.
Wei WangDepartment of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR 999077, P.R. China.ORCID 0000-0002-3137-3825
Pengshan XieDepartment of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR 999077, P.R. China.ORCID 0000-0002-5949-3458
Yuecheng XiongDepartment of Chemistry, City University of Hong Kong, Hong Kong SAR 999077, P.R. China.ORCID 0000-0002-6256-6152
Walid A DaoudDepartment of Mechanical Engineering, City University of Hong Kong, Hong Kong SAR 999077, P.R. China.ORCID 0000-0002-5807-5043
Zhiyong FanDepartment of Electronic & Computer Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong SAR, P.R. China.ORCID 0000-0002-5397-0129
Dong-Myeong ShinDepartment of Mechanical Engineering, The University of Hong Kong, Hong Kong SAR 999077, P.R. China.ORCID 0000-0002-5402-9947
Yong YangDepartment of Mechanical Engineering, City University of Hong Kong, Hong Kong SAR 999077, P.R. China.ORCID 0000-0002-0491-8295
Yang LuDepartment of Mechanical Engineering, The University of Hong Kong, Hong Kong SAR 999077, P.R. China.ORCID 0000-0002-9280-2718
Xiao Cheng ZengDepartment of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR 999077, P.R. China.ORCID 0000-0003-4672-8585
You MengChangsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China.ORCID 0000-0002-5385-4080
Johnny C HoDepartment of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR 999077, P.R. China.ORCID 0000-0003-3000-8794
Funding
No grant is acknowledged in the PubMed record.
6 · The paper itself
Abstract
Beyond conventional ferroelectric compounds, the realization of single-element ferroelectricity expands the scope of ferroelectric materials and diversifies polarization mechanisms. However, strategies for manipulating ferroelectric dipoles in elemental ferroelectrics remain underexplored, limiting their broader applications. Here, we introduce a universal flexoelectric manipulation strategy to tune the ferroelectric and piezoelectric polarization of one-dimensional self-strained tellurium (Te) ferroelectrics. A substantial flexoelectric field of 9.55 microcoulombs per square centimeter was observed in self-strained Te, inducing a polarization rotation of 18°, comparable to the typical 15° rotation in ferroelectric PbTiO
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.
Flexoelectric manipulation of ferroelectric polarization in self-strained tellurium. · full record | OpenQuestion