Evidence map›Paper›PMID 40749045›Full record

ArticleScience advances2025

Tailoring tin-based perovskite crystallization via large cations and pseudo-halide anions for high mobility and high stable transistors.

Yanqiu Wu, Feng Yuan, Shuzhang Yang, Enlong Li, Wunan Wang, Yu Liu, Xiaomin Yang, Jincheng Wen, Lina Hua, Yingguo Yang and 3 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Science advances, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.

0numbers the graph read from it
0cells of the map it votes in
3citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

3 citing papers in PubMed.

  1. Article
  2. Article
  3. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

13 authors.

Yanqiu WuState Key Laboratory of Photovoltaic Science and Technology, Institute of Optoelectronics, College of Future Information Technology, Fudan University, Shanghai 200433, China.ORCID 0009-0000-5076-0153
Feng YuanState Key Laboratory of Photovoltaic Science and Technology, Institute of Optoelectronics, College of Future Information Technology, Fudan University, Shanghai 200433, China.
Shuzhang YangState Key Laboratory of Photovoltaic Science and Technology, Institute of Optoelectronics, College of Future Information Technology, Fudan University, Shanghai 200433, China.
Enlong LiState Key Laboratory of Photovoltaic Science and Technology, Institute of Optoelectronics, College of Future Information Technology, Fudan University, Shanghai 200433, China.ORCID 0009-0002-1563-4922
Wunan WangState Key Laboratory of Photovoltaic Science and Technology, Institute of Optoelectronics, College of Future Information Technology, Fudan University, Shanghai 200433, China.ORCID 0009-0009-3783-5128
Yu LiuState Key Laboratory of Photovoltaic Science and Technology, Institute of Optoelectronics, College of Future Information Technology, Fudan University, Shanghai 200433, China.
Xiaomin YangState Key Laboratory of Photovoltaic Science and Technology, Institute of Optoelectronics, College of Future Information Technology, Fudan University, Shanghai 200433, China.
Jincheng WenState Key Laboratory of Photovoltaic Science and Technology, Institute of Optoelectronics, College of Future Information Technology, Fudan University, Shanghai 200433, China.
Lina HuaState Key Laboratory of Photovoltaic Science and Technology, Institute of Optoelectronics, College of Future Information Technology, Fudan University, Shanghai 200433, China.
Yingguo YangSchool of Microelectronics, Fudan University, Shanghai 200433, China.ORCID 0000-0002-1749-2799
Yusheng LeiState Key Laboratory of Photovoltaic Science and Technology, Institute of Optoelectronics, College of Future Information Technology, Fudan University, Shanghai 200433, China.
Junhao ChuState Key Laboratory of Photovoltaic Science and Technology, Institute of Optoelectronics, College of Future Information Technology, Fudan University, Shanghai 200433, China.ORCID 0000-0003-1867-9296
Wenwu LiState Key Laboratory of Photovoltaic Science and Technology, Institute of Optoelectronics, College of Future Information Technology, Fudan University, Shanghai 200433, China.ORCID 0000-0002-9307-1566

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Tin-based perovskites, renowned for their eco-friendliness, intrinsic high hole mobility, and low effective mass, hold great potential for p-type thin-film transistors (TFTs). However, their propensity for rapid crystallization and oxidation severely limits stability and carrier mobility. Here, we strategically enhance perovskite TFT performance by incorporating 2-thiopheneethylamine thiocyanate (TEASCN) into 3D tin-based perovskites. The induction of the pseudo-halide SCN

Identifiers

PMID40749045
PMCPMC12315951

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.