Evidence map›Paper›PMID 40739988›Full record

ArticleACS nano2025

Hua-Jing Huang, Chien-Hua Wang, Che-Hung Wang, Fang-Chun Shen, Shih-Chi Yang, Jia-Juen Ong, Wei-Lan Chiu, Hsiang-Hung Chang, Chih Chen, Wen-Wei Wu

Abstract read
In one paragraph

Article in ACS nano, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.

0numbers the graph read from it
0cells of the map it votes in
4citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

4 citing papers in PubMed.

  1. Electropulse-Driven Dislocation Evolution in Sub-10 nm Metallic Nanocrystals.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Article
  2. Article
  3. Review
  4. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

10 authors.

Hua-Jing HuangDepartment of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Chien-Hua WangDepartment of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Che-Hung WangDepartment of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Fang-Chun ShenDepartment of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Shih-Chi YangDepartment of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Jia-Juen OngDepartment of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Wei-Lan ChiuElectronic and Optoelectronic System Research Laboratories, Industrial Technology Research Institute, Hsinchu 30010, Taiwan.
Hsiang-Hung ChangElectronic and Optoelectronic System Research Laboratories, Industrial Technology Research Institute, Hsinchu 30010, Taiwan.
Chih ChenDepartment of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.ORCID 0000-0001-6235-2827
Wen-Wei WuDepartment of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.ORCID 0000-0002-8388-8417

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Electromigration (EM) poses significant challenges to the reliability of miniaturized devices, particularly three-dimensional integrated circuits (3DICs) operating under high current densities. The EM phenomenon results from atomic-scale mechanisms involving momentum transfer between electron carriers and atoms. In this study, high-resolution transmission electron microscopy (HRTEM) was employed to investigate the atomic-scale behavior of EM in Cu-Cu joints. The analysis revealed that EM initially induced slip along various crystallographic planes, which gradually evolved into a stable slip along specific orientations, dominating the failure. This anisotropic atomic transport led to progressive degradation at the Cu-Cu bonding interface, including void formation and microstructural evolution. This interface depletion has been identified as a critical factor influencing the reliability of 3DIC packaging. Results emphasized the need for optimizing interconnect and interface properties to mitigate EM-induced failures, which is relevant to the development of high-power semiconductor technologies.

Indexed as

3D ICelectromigrationelectroplated copperhigh-resolution TEMin situ HRTEM

Identifiers

PMID40739988
PMCPMC12392731

What OpenQuestion holds

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LicenceCC BY
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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.