Evidence map›Paper›PMID 40731723›Full record

ArticleMicromachines2025

Understanding the Nanoindentation Edge Effect of Single-Crystal Silicon Using Molecular Dynamics Simulations.

Chao Long, Ruihan Li, Pengyue Zhao, Ziteng Li, Shuhao Kang, Duo Li, Huan Liu

Abstract read
In one paragraph

Article in Micromachines, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

7 authors.

Chao LongCenter of Ultra-Precision Optoelectronic Instrumentation Engineering, Harbin Institute of Technology, Harbin 150001, China.
Ruihan LiCollege of Mechanical and Electrical Engineering, Harbin Engineering University, Harbin 150001, China.ORCID 0009-0001-2927-2101
Pengyue ZhaoCenter of Ultra-Precision Optoelectronic Instrumentation Engineering, Harbin Institute of Technology, Harbin 150001, China.
Ziteng LiState Key Laboratory of Mechanical System and Vibration, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
Shuhao KangState Key Laboratory of Mechanical System and Vibration, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.ORCID 0009-0008-0936-4026
Duo LiState Key Laboratory of Mechanical System and Vibration, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
Huan LiuCenter of Ultra-Precision Optoelectronic Instrumentation Engineering, Harbin Institute of Technology, Harbin 150001, China.

Funding

National Natural Science Foundation of China 52405585Postdoctoral Fellowship Program of CPSF GZC20242223
6 · The paper itself

Abstract

The edge effect refers to what occurs when an object undergoes elastic contact with the edge of a material. This is common in practical applications, but the understanding of this phenomenon is not yet mature enough, and understanding the microscopic characteristics of the material regarding this phenomenon is necessary. This article investigates the edge effects of single-crystal silicon at different indentation positions through molecular dynamics simulations. The results indicate that the edge effect of the indentation is influenced by the indentation position and depth. The closer the indentation head is to the edge of the workpiece, the more particles are extruded from the side of the workpiece and the wider the collapse range of the indentation surface. At the same time, the indentation position also affects the distribution of the von Mises stress and phase transition area. When the edge effect occurs, the von Mises stress and phase transition region tend to be concentrated near the workpiece edge. This study demonstrates the atomic-scale deformation mechanism of single-crystal silicon under varying indentation positions.

Indexed as

edge effectmolecular dynamicsnanoindentationsingle-crystal Si

Identifiers

PMID40731723
PMCPMC12298955

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