A Theoretical Analysis of the Frequency Response in p-i-n Photodiodes that Use InGaAs/InP Materials.

Nesrine Bakalem, Abdelkader Aissat, Samuel Dupont, Faouzi Saidi, Mohamed Houcine Dhaou, Jean Pierre Vilcot

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Article in Micromachines, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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5 · Who and what money

Authors and funding

6 authors.

Nesrine BakalemLATSI Laboratory, University Blida1, Blida 09000, Algeria.

Abdelkader AissatLATSI Laboratory, University Blida1, Blida 09000, Algeria.ORCID 0000-0003-3635-8568

Samuel DupontInstitute of Electronics, Microelectronics and Nanotechnology (IEMN), UMR CNRS 8520, University of sciences and Technologies of Lille, 1Avenue Poincare, 60069, 59652 Villeneuve of Ascq, France.ORCID 0000-0003-3588-0506

Faouzi SaidiMicro-Optoelectronics and Nanostructures Laboratory, Department of Physics, Faculty of Sciences of Monastir, University of Monastir, Environment Street, Monastir 5000, Tunisia.

Mohamed Houcine DhaouDepartment of Physics, College of Science, Qassim University, P.O. Box 51452, Burayda Almolaydah 6644, Saudi Arabia.

Jean Pierre VilcotInstitute of Electronics, Microelectronics and Nanotechnology (IEMN), UMR CNRS 8520, University of sciences and Technologies of Lille, 1Avenue Poincare, 60069, 59652 Villeneuve of Ascq, France.ORCID 0000-0002-6448-4740

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

This investigation is centered on the analysis of frequency response characteristics of a p-i-n photodiode using InxGa

Indexed as

detectionmaterialsoptoelectronicp-i-n photodiodesemiconductors III-V

Identifiers

PMID40731673

DOI10.3390/mi16070764

PMCPMC12299745

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