Investigation of Impact-Ionization-Enhanced Effect on SiC Thyristors Triggered by Weak UV Light.

Yulei Zhang, Xi Wang, Lechen Liu, Xuan Ji, Junhui Hou, Hongbin Pu

Abstract read

In one paragraph

Article in Micromachines, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it

0cells of the map it votes in

0citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

6 authors.

Yulei ZhangDepartment of Electrical Engineering, Xi'an University of Technology, Xi'an 710048, China.

Xi WangDepartment of Electrical Engineering, Xi'an University of Technology, Xi'an 710048, China.ORCID 0000-0002-7905-0080

Lechen LiuDepartment of Electrical Engineering, Xi'an University of Technology, Xi'an 710048, China.

Xuan JiDepartment of Electrical Engineering, Xi'an University of Technology, Xi'an 710048, China.

Junhui HouDepartment of Electrical Engineering, Xi'an University of Technology, Xi'an 710048, China.

Hongbin PuDepartment of Electrical Engineering, Xi'an University of Technology, Xi'an 710048, China.

Funding

National Natural Science Foundation of China 52377197National Natural Science Foundation of China 62004161National Natural Science Foundation of China 62174135Scientific Research Project of Shaanxi Provincial Education Department 23JP101Shaanxi Innovation Capability Support Project 2021TD-25

6 · The paper itself

Abstract

The impact-ionization-enhanced mechanism is introduced into a SiC light-triggered thyristor (LTT) to improve its switching speed under weak UV illumination. The effects of impact ionization on photogenerated carrier multiplication and the dynamic switching performance of the SiC LTT are investigated through TCAD simulation. The relationships between bias voltage, UV light intensity, and key dynamic parameters are analyzed. Simulation results indicate that when the bias voltage exceeds 14 kV, the device enters the avalanche multiplication regime, leading to a significant increase in photocurrent under a given UV intensity. As the bias voltage increases, the turn-on time of the thyristor first decreases, then saturates, and finally drops rapidly. Under UV illumination of 100 mW/cm

Indexed as

4H-SiCimpact ionizationlight-triggered switchesthyristorUV light

Identifiers

PMID40731670

DOI10.3390/mi16070761

PMCPMC12299146

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.