ArticleMicromachines2025
The Growth Mechanism of Boron-Doped Diamond in Relation to the Carbon-to-Hydrogen Ratio Using the Hot-Filament Chemical Vapor Deposition Method.
Article in Micromachines, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
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1 citing paper in PubMed.
- Design and structural engineering of a layered CuClRSC advances · 2026Article
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4 authors.
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Abstract
This study synthesized boron-doped diamond (BDD) thin films using hot-filament chemical vapor deposition at different carbon-to-hydrogen (C/H) ratios in the range of 0.3-0.9%. The C/H ratio influence, a key parameter controlling the balance between diamond growth and hydrogen-assisted etching, was systematically investigated while maintaining other deposition parameters constant. Microstructural and electrochemical analysis revealed that increasing the C/H ratio from 0.3% to 0.7% led to a reduction in sp2-bonded carbon and enhanced the crystallinity of the diamond films. The improved conductivity under these conditions can be attributed to effective substitutional boron doping. Notably, the film deposited at a C/H ratio of 0.7% exhibited the highest electrical conductivity and the widest electrochemical potential window (2.88 V), thereby indicating excellent electrochemical stability. By contrast, at a C/H ratio of 0.9%, the excessively supplied carbon degraded the film quality and electrical and electrochemical performance, which was owing to the increased formation of sp
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