Evidence map›Paper›PMID 40713027›Full record

ArticleNano letters2025

Dephasing Mechanisms of Topologically Protected 2D Surface Carriers in Sputtered SnTe Thin Films.

Negin Beryani Nezafat, Ahana Bhattacharya, Sepideh Izadi, Inga Ennen, Martin Wortmann, Lauritz Schnatmann, Shahram Solaymani, Sławomir Kulesza, Miroslaw Bramowicz, Michael Westphal and 7 more

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Article in Nano letters, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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1 · What the graph read from it

What it found

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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

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3 · Its place in the literature

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4 · The record

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5 · Who and what money

Authors and funding

17 authors.

Negin Beryani NezafatInstitute for Energy and Materials Processes Applied Quantum Materials, University of Duisburg-Essen, 47057 Duisburg, Germany.
Ahana BhattacharyaDepartment of Physics, University of Duisburg-Essen, 47057 Duisburg, Germany.
Sepideh IzadiInstitute for Energy and Materials Processes Applied Quantum Materials, University of Duisburg-Essen, 47057 Duisburg, Germany.
Inga EnnenDepartment of Physics, Bielefeld University, 33615 Bielefeld, Germany.
Martin WortmannDepartment of Physics, Bielefeld University, 33615 Bielefeld, Germany.
Lauritz SchnatmannDepartment of Physics, Bielefeld University, 33615 Bielefeld, Germany.
Shahram SolaymaniQuantum Technologies Research Center (QTRC), SR.C, Islamic Azad University, Tehran, Iran.
Sławomir KuleszaFaculty of Technical Sciences, University of Warmia and Mazury in Olsztyn, 10-719 Olsztyn, Poland.
Miroslaw BramowiczFaculty of Technical Sciences, University of Warmia and Mazury in Olsztyn, 10-719 Olsztyn, Poland.
Michael WestphalDepartment of Physics, Bielefeld University, 33615 Bielefeld, Germany.
Jan BiedingerDepartment of Physics, Bielefeld University, 33615 Bielefeld, Germany.
Karsten RottDepartment of Physics, Bielefeld University, 33615 Bielefeld, Germany.
Michael DittlerDepartment of Physics, University of Duisburg-Essen, 47057 Duisburg, Germany.
Andreas HüttenDepartment of Physics, Bielefeld University, 33615 Bielefeld, Germany.
Günter ReissDepartment of Physics, Bielefeld University, 33615 Bielefeld, Germany.
Martin MittendorffDepartment of Physics, University of Duisburg-Essen, 47057 Duisburg, Germany.
Gabi SchierningInstitute for Energy and Materials Processes Applied Quantum Materials, University of Duisburg-Essen, 47057 Duisburg, Germany.ORCID 0000-0003-2591-2463

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Tin telluride (SnTe), a topological crystalline insulator, features two-dimensional (2D) surface charge carriers with topological protection and 3D bulk charge carriers. The outstanding electronic properties of the 2D carriers are often obscured in experiments due to their relatively low number. We address this by using nanocrystalline sputtered SnTe thin films deposited at room temperature, which increase the proportion of 2D carriers. Here, we correlate the structural and electronic parameters and investigate the dephasing mechanisms of these 2D electrons. The dephasing mechanisms vary from quasi-1D electron-electron interactions in the thinnest film studied to 2D electron-electron interactions and finally to electron-phonon interactions in thicker films. Using THz time domain spectroscopy, we measured the scattering rates of the 2D charge carriers and found excellent agreement with the Hikami-Larkin-Nagaoka (HLN) model.

Indexed as

Electron−electron interactionThin filmsTopological insulatorWeak antilocalization

Identifiers

PMID40713027
PMCPMC12333402

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.