Evidence map›Paper›PMID 40711233›Full record

ArticleNanomaterials (Basel, Switzerland)2025

Interface-Driven Electrothermal Degradation in GaN-on-Diamond High Electron Mobility Transistors.

Huanran Wang, Yifan Liu, Xiangming Dong, Abid Ullah, Jisheng Sun, Chuang Zhang, Yucheng Xiong, Peng Gu, Ge Chen, Xiangjun Liu

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

10 authors.

Huanran WangInstitute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, Shanghai 200051, China.
Yifan LiuInstitute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, Shanghai 200051, China.
Xiangming DongInstitute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, Shanghai 200051, China.
Abid UllahInstitute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, Shanghai 200051, China.
Jisheng SunInstitute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, Shanghai 200051, China.
Chuang ZhangInstitute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, Shanghai 200051, China.
Yucheng XiongInstitute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, Shanghai 200051, China.
Peng GuInstitute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, Shanghai 200051, China.
Ge ChenInstitute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, Shanghai 200051, China.
Xiangjun LiuInstitute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, Shanghai 200051, China.

Funding

National Natural Science Foundation of China 12374027
6 · The paper itself

Abstract

Diamond is an attractive substrate candidate for GaN high-electron-mobility transistors (HEMT) to enhance heat dissipation due to its exceptional thermal conductivity. However, the thermal boundary resistance (TBR) at the GaN-diamond interface poses a significant bottleneck to heat transport, exacerbating self-heating and limiting device performance. In this work, TCAD simulations were employed to systematically investigate the effects of thermal boundary layer (TBL) thickness (

Indexed as

electron mobility degradationheat transferhigh electron mobility transistorself-heating effectsthermal boundary resistance

Identifiers

PMID40711233
PMCPMC12298958

What OpenQuestion holds

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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.