Evidence map›Paper›PMID 40711191›Full record

ArticleNanomaterials (Basel, Switzerland)2025

High-Performance Multilevel and Ambipolar Nonvolatile Organic Transistor Memory Using Small-Molecule SFDBAO and PS as Charge Trapping Elements.

Lingzhi Jin, Wenjuan Xu, Yangzhou Qian, Tao Ji, Kefan Wu, Liang Huang, Feng Chen, Nanchang Huang, Shu Xing, Zhen Shao and 3 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

13 authors.

Lingzhi JinSchool of Electronics Information Engineering & School of Integrated Circuits, Nanjing University of Industry Technology, Nanjing 210023, China.ORCID 0000-0002-4036-4576
Wenjuan XuState Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications (NJUPT), Nanjing 210023, China.
Yangzhou QianSchool of Electronics Information Engineering & School of Integrated Circuits, Nanjing University of Industry Technology, Nanjing 210023, China.
Tao JiSchool of Electronics Information Engineering & School of Integrated Circuits, Nanjing University of Industry Technology, Nanjing 210023, China.
Kefan WuSchool of Electronics Information Engineering & School of Integrated Circuits, Nanjing University of Industry Technology, Nanjing 210023, China.
Liang HuangSchool of Electronics Information Engineering & School of Integrated Circuits, Nanjing University of Industry Technology, Nanjing 210023, China.
Feng ChenSchool of Electronics Information Engineering & School of Integrated Circuits, Nanjing University of Industry Technology, Nanjing 210023, China.
Nanchang HuangSchool of Electronics Information Engineering & School of Integrated Circuits, Nanjing University of Industry Technology, Nanjing 210023, China.
Shu XingSchool of Electronics Information Engineering & School of Integrated Circuits, Nanjing University of Industry Technology, Nanjing 210023, China.
Zhen ShaoState Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications (NJUPT), Nanjing 210023, China.
Wen LiState Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications (NJUPT), Nanjing 210023, China.
Yuyu LiuSchool of Electronics Information Engineering & School of Integrated Circuits, Nanjing University of Industry Technology, Nanjing 210023, China.
Linghai XieState Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications (NJUPT), Nanjing 210023, China.

Funding

National Natural Science Foundation of China 62304106State Scholarship Fund of China Scholarship Council 201908320064
6 · The paper itself

Abstract

Organic nonvolatile transistor memories (ONVMs) using a hybrid spiro [fluorene-9,7'-dibenzo [c, h] acridine]-5'-one (SFDBAO)/polystyrene (PS) film as bulk-heterojunction-like tunneling and trapping elements were fabricated. From the characterization of the 10% SFDBAO/PS based on ONVM, a sterically hindered small-molecule SFDBAO with rigid orthogonal configuration and a donor-acceptor (D-A) structure as a molecular-scale charge storage element demonstrated significantly higher charge trapping ability than other small-molecule materials such as C

Indexed as

charge trapping elementsnonvolatile transistor memorysmall-molecule materials

Identifiers

PMID40711191
PMCPMC12300832

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.