Evidence map›Paper›PMID 40711178›Full record

ReviewNanomaterials (Basel, Switzerland)2025

Recent Advances in Chemical Vapor Deposition of Hexagonal Boron Nitride on Insulating Substrates.

Hua Xu, Kai Li, Zuoquan Tan, Jiaqi Jia, Le Wang, Shanshan Chen

Abstract readReview
PubMed Full text at PMC Publisher
In one paragraph

Review in Nanomaterials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.

0numbers the graph read from it
0cells of the map it votes in
3citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

3 citing papers in PubMed.

  1. Design of Highly Sensitive NONanomaterials (Basel, Switzerland) · 2026
    Article
  2. Article
  3. Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

6 authors.

Hua XuBeijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices, School of Physics, Renmin University of China, Beijing 100872, China.
Kai LiBeijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices, School of Physics, Renmin University of China, Beijing 100872, China.
Zuoquan TanBeijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices, School of Physics, Renmin University of China, Beijing 100872, China.
Jiaqi JiaBeijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices, School of Physics, Renmin University of China, Beijing 100872, China.
Le WangBeijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices, School of Physics, Renmin University of China, Beijing 100872, China.
Shanshan ChenBeijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices, School of Physics, Renmin University of China, Beijing 100872, China.ORCID 0000-0002-3155-8571

Funding

the Fundamental Research Funds for the Central Universities and the Research Funds of Renmin University of China No. 21XNLG26the National Key Research and Development Program of China No. 2024YFA1409700
6 · The paper itself

Abstract

Direct chemical vapor deposition (CVD) growth of hexagonal boron nitride (h-BN) on insulating substrates offers a promising pathway to circumvent transfer-induced defects and enhance device integration. This comprehensive review systematically evaluates recent advances in CVD techniques for h-BN synthesis on insulating substrates, including metal-organic CVD (MOCVD), low-pressure CVD (LPCVD), atmospheric-pressure CVD (APCVD), and plasma-enhanced CVD (PECVD). Key challenges, including precursor selection, high-temperature processing, achieving single-crystalline films, and maintaining phase purity, are critically analyzed. Special emphasis is placed on comparative performance metrics across different growth methodologies. Furthermore, crucial research directions for future development in this field are outlined. This review aims to serve as a reference for advancing h-BN synthesis toward practical applications in next-generation electronic and optoelectronic devices.

Indexed as

2D materialsCVDdirect growthh-BNinsulating substrates

Identifiers

PMID40711178
PMCPMC12299321

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.