Evidence map›Paper›PMID 40700506›Full record

ArticleScience advances2025

Two-dimensional buffer breaks substrate limit in III-nitrides epitaxy.

Yimeng Sang, Xiangming Xu, Ying Wu, Guanqun Feng, Xu Zhang, Fulin Zhuo, Zhengxian Jin, Hui Guo, Tao Tao, Sun'an Ding and 9 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Science advances, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

19 authors.

Yimeng SangSchool of Integrated Circuits, Nanjing University, Suzhou 215163, China.ORCID 0009-0003-5905-1144
Xiangming XuCenter for Renewable Energy and Storage Technologies (CREST), King Abdullah University of Science & Technology (KAUST), Thuwal 23955-2900, Saudi Arabia.ORCID 0000-0002-8047-8244
Ying WuSchool of Integrated Circuits, Nanjing University, Suzhou 215163, China.ORCID 0000-0001-9207-4127
Guanqun FengSchool of Integrated Circuits, Nanjing University, Suzhou 215163, China.
Xu ZhangSchool of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
Fulin ZhuoSchool of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
Zhengxian JinSchool of Microelectronics, Hefei University of Technology, 193 Tunxi Road, Hefei 230009, China.ORCID 0009-0007-2260-4496
Hui GuoSchool of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
Tao TaoSchool of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.ORCID 0000-0001-8601-8583
Sun'an DingSchool of Integrated Circuits, Nanjing University, Suzhou 215163, China.ORCID 0000-0002-9795-1448
Xuefeng WangSchool of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.ORCID 0000-0002-3472-7895
Dunjun ChenSchool of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
Kazuhiro OhkawaElectrical and Computer Engineering Program, Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955, Saudi Arabia.ORCID 0000-0002-8728-3503
Kun XingSchool of Microelectronics, Hefei University of Technology, 193 Tunxi Road, Hefei 230009, China.ORCID 0000-0002-0644-2833
Xinran WangSchool of Integrated Circuits, Nanjing University, Suzhou 215163, China.ORCID 0000-0002-3975-1667
Zhe ZhuangSchool of Integrated Circuits, Nanjing University, Suzhou 215163, China.ORCID 0000-0002-2565-5500
Rong ZhangSchool of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.ORCID 0000-0003-0015-6331
Husam N AlshareefCenter for Renewable Energy and Storage Technologies (CREST), King Abdullah University of Science & Technology (KAUST), Thuwal 23955-2900, Saudi Arabia.ORCID 0000-0001-5029-2142
Bin LiuSchool of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.ORCID 0000-0002-9495-6809

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Expanding the diversity of substrate materials for the growth of single-crystalline films enables the heterointegration of electronic and optoelectronic devices in modern semiconductor industry. However, the substrate materials are restricted to those having matched single-crystalline lattices with the epilayers, thereby making the use of non-single-crystalline substrates infeasible. Here, we report an epitaxy strategy for the wafer-scale growth of high-quality single-crystalline gallium nitride (GaN) on an amorphous silicon dioxide (SiO

Identifiers

PMID40700506
PMCPMC12285718

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.