ArticleNano letters2025
High-Resolution Nanoscale AC Quantum Sensing in CMOS Compatible SiC.
Article in Nano letters, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
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Who cites it
3 citing papers in PubMed.
- Spin-photon qubits for scalable quantum network.Light, science & applications · 2026Review
- Wavelength-Dependent Electrical Readout of Spin Ensembles in a Thin-Film SiC-on-Insulator Platform.Nano letters · 2026Article
- Device engineering for photocurrent detected magnetic resonance and scanning probes using solid-state spin defects.Science and technology of advanced materials · 2026Review
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
8 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
High-resolution nanoscale nuclear magnetic resonance (NMR) allows measurement of chemical structure at the single-molecule level for determining molecular dynamics. Until now, nitrogen vacancy centers in diamond have been the only platform to demonstrate single-defect NMR sensing at sub-Hz spectral resolution. Using a single silicon vacancy defect prepared under CMOS-compatible conditions in commercial 4H-silicon carbide at room temperature, we use the Synchronized Readout technique to measure a test signal. We achieve a spectral resolution of 0.33 Hz, necessary for understanding molecular structure, and estimate a magnetic sensitivity of 358 μT/
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Registered trials
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