ArticleACS applied materials & interfaces2025
Spatially Correlated Oxygen Vacancies, Electrons and Conducting Paths in TiO
Article in ACS applied materials & interfaces, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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6 authors.
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Abstract
Resistive switching, characterized by reversible changes in material resistance under external electric fields, underpins resistive random-access memory (ReRAM) technology, which holds promise for next-generation memory and neuromorphic devices owing to its fast switching speed, nonvolatility, and structural simplicity. Among materials exhibiting resistive switching, transition metal oxides emerge as leading candidates for ReRAM components due to their high CMOS compatibility. However, complex thermal, electrical, chemical, and mechanical interactions during switching introduce variability, leaving the underlying mechanisms insufficiently understood. Therefore, this study investigates the ionic-electronic dynamics involved in resistive switching, focusing on the electroforming and reset processes in TiO
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