ArticleNature communications2025
Direct dehydrocoupling facilitates efficient thiophene anchoring on silicon surfaces.
Article in Nature communications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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6 authors.
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Abstract
Silicon is a cornerstone material in electronics and photovoltaics due to its abundance, tunable semiconducting properties, and chemical versatility. Direct anchoring of thiophenes, with their highly delocalized aromatic backbones, onto silicon surfaces offers a promising route to tailor charge carrier migration properties. However, current methods for anchoring thiophenes commonly rely on pre-activation of precursors or transition-metal catalysts. Here, we introduce a catalyst-free radical strategy for direct linkage of thiophenes with Si atoms on organosilanes and silicon surfaces. This method leverages thermally induced homolytic cleavage of Si-H bonds to generate silicon radicals, which undergo efficient hydrosilylation with thiophene rings, forming Si-C linkages and releasing H
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