Evidence map›Paper›PMID 40670613›Full record

ArticleScientific reports2025

Effect of halogen substitution on the electronic and optical behavior of C₁₆H₁₀X₂O₂(X = F, cl, Br and I) organic semiconductors.

F Benlakhdar, M A Ghebouli, M Fatmi, B Ghebouli, S Alomairy, Faisal Katib Alanazi, A Djemli, Talal M Althagafi

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Article in Scientific reports, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

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2citing papers in PubMed
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1 · What the graph read from it

What it found

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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

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3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

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4 · The record

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5 · Who and what money

Authors and funding

8 authors.

F BenlakhdarResearch Center in Industrial Technologies CRTI, P.O. Box 64, Cheraga, Algiers, 16014, Algeria.
M A GhebouliResearch Unit on Emerging Materials (RUEM), University Ferhat Abbas of Setif 1, Setif, 19000, Algeria.
M FatmiResearch Unit on Emerging Materials (RUEM), University Ferhat Abbas of Setif 1, Setif, 19000, Algeria.
B GhebouliLaboratory of Studies Surfaces and Interfaces of Materials Solids (LESIMS), Faculty of Technology, University Ferhat Abbas of Setif 1, Setif, 19000, Algeria.
S AlomairyDepartment of Physics, college of Sciences, Taif University, P.O. Box 11099, Taif, 21944, Saudi Arabia.
Faisal Katib AlanaziDepartment of Physics, college of Sciences, Northern Border University, Arar, 73222, Saudi Arabia. Faisal.katib.al@gmail.com.
A DjemliFaculty of physics, University of Sciences & Technology Houari Boumediene (U.S.T.H.B), El Alia, BP 32, Bab Ezzouar, Algiers, 16111, Algeria.
Talal M AlthagafiDepartment of Physics, college of Sciences, Taif University, P.O. Box 11099, Taif, 21944, Saudi Arabia.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

In this study, a comprehensive analysis of the structural, electronic, and optical properties of C₁₆H₁₀X₂O₂ compounds (where X = F, Cl, Br, I) was conducted using first-principles calculations based on Density Functional Theory (DFT). The results demonstrate that the substitution of different halogens significantly influences the electronic structure and optical properties of these organic compounds. Structural data revealed a systematic relationship between crystal lattice constants and the atomic radius and electronegativity of the substituted halogen atoms, with an observed increase in the c/a and c/b ratios when moving from F to I. Electronic band structure analysis showed that the band gap follows the pattern Br < Cl < F < I, indicating that brominated derivatives exhibit more pronounced semiconducting behavior. Partial Density of States (PDOS) curves confirm the pivotal role of halogen p orbitals in determining the properties of upper valence bands. Regarding optical properties, reflectivity, absorption, refractive index, and loss function spectra were analyzed across an energy range of 0-40 eV, revealing systematic variations correlated with the type of halogen substituent. Chlorine-containing compounds exhibited the highest reflectivity, absorption, and loss function values in the 15-25 eV range, while iodine-containing compounds showed the highest refractive index in the low-energy region. These structure-property relationships provide valuable insights for designing organic materials with specific electronic and optical properties for advanced organic electronics applications.

Indexed as

C₁₆H₁₀X₂O₂Halogenated organic semiconductorsLoss functionOptoelectronic materialsPDOSRefractive indexStructure-property relationshipsTDOS

Identifiers

PMID40670613
PMCPMC12267390

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