ArticleScience advances2025
Polytelluoxane as the ideal formulation for EUV photoresist.
Article in Science advances, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
4 citing papers in PubMed.
- Electron-Induced C─F Bond Activation in SnAngewandte Chemie (International ed. in English) · 2026Article
- Mechanisms of Film-Formation-Related Defects in EUV Photoresists for Sub-3 nm Nodes and Synergistic Materials-Process-Intelligence Co-Optimization.Micromachines · 2026Review
- Recyclable thermoplastic silicone elastomers from non-carbon heteroatomic polymer backbones.Nature communications · 2026Article
- Rapid photocontrollable dopamine polymerization for instant adaptive wet adhesion.Nature communications · 2026Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
5 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Extreme ultraviolet (EUV) lithography has become the essence of advanced semiconductor manufacturing processes. While enabling smaller feature sizes, EUV lithography imposes increasingly stringent requirements on the comprehensive performance and stochastic defect suppression of photoresist. The widely recognized strategy to minimize these defects is a material that integrates high EUV absorption and energy utilization into a homogeneous system based on molecular building blocks-the ideal formulation for EUV photoresist. However, achieving these integrated characteristics within a single molecule has remained an unresolved challenge. Here, we address all these requirements by polytelluoxane using an organic telluride monomer polymerized via Te─O bonds. This polymeric photoresist, operating through a main chain scission mechanism, demonstrates high-performance positive-tone lithography. Attributed to this ideal formulation, our photoresist achieves a comprehensive 18-nm line width at a dose of 13.1 mJ/cm
Identifiers
What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.