Evidence map›Paper›PMID 40668066›Full record

ArticleAdvanced materials (Deerfield Beach, Fla.)2025

Quantitatively Predicting Angle-Resolved Polarized Raman Intensity of Anisotropic Layered Materials.

Jia-Liang Xie, Tao Liu, Yu-Chen Leng, Rui Mei, Heng Wu, Chen-Kai Liu, Jia-Hong Wang, Yang Li, Xue-Feng Yu, Miao-Ling Lin and 1 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Advanced materials (Deerfield Beach, Fla.), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

11 authors.

Jia-Liang XieState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Tao LiuState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Yu-Chen LengState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Rui MeiState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Heng WuState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Chen-Kai LiuState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Jia-Hong WangCenter of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
Yang LiShenzhen Engineering Center for the Fabrication of Two-Dimensional Atomic Crystals, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China.
Xue-Feng YuCenter of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
Miao-Ling LinState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.ORCID https://orcid.org/0000-0001-5838-8237
Ping-Heng TanState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.ORCID https://orcid.org/0000-0001-6575-1516

Funding

Beijing Nova Program 20230484301CAS Key Research Program of Frontier Sciences ZDBS-LY-SLH004CAS Project for Young Scientists in Basic Research YSBR-026Key Technologies Research and Development Program 2023YFA1407000National Natural Science Foundation of China 12127807National Natural Science Foundation of China 12322401National Natural Science Foundation of China 12393832Strategic Priority Research Program of CAS XDB0460000Youth Innovation Promotion Association, Chinese Academy of Sciences 2023125
6 · The paper itself

Abstract

Angle-resolved polarized Raman (ARPR) spectroscopy provides insights into optical anisotropy and symmetry-related electron-photon/electron-phonon couplings of anisotropic layered materials (ALMs). However, since their discovery over ten years ago, ARPR responses in ALM flakes has exhibited a puzzling dependence on flake thickness, excitation wavelength, and dielectric environment, complicating their understanding and prediction. By taking black phosphorus (BP) (⩾20 nm) flakes and four-layer Td-WTe

Indexed as

angle‐resolved polarized Raman intensityanisotropic layered materialcomplex Raman tensorcomplex refractive indexoptical anisotropy

Identifiers

PMID40668066
PMCPMC12510302

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.