ArticleNanomaterials (Basel, Switzerland)2025
High-Performance GaN-Based Green Flip-Chip Mini-LED with Lattice-Compatible AlN Passivation Layer.
Article in Nanomaterials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
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2 citing papers in PubMed.
- Constructing (101)-Oriented Anatase TiONanomaterials (Basel, Switzerland) · 2026Article
- Comparison of Quantum Transition Characteristics of Group II-VI (ZnO), Group III-V (GaN) Compound Semiconductors, and Intrinsic (Si) Semiconductors in Response to Externally Applied Energy.Materials (Basel, Switzerland) · 2025Article
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Authors and funding
10 authors.
Funding
Abstract
The GaN-based green miniaturized light-emitting diode (mini-LED) is a key component for the realization of full-color display. Optimized passivation layers can alleviate the trapping of carriers by sidewall defects and are regarded as an effective way to improve the external quantum efficiency (EQE) efficiency of mini-LEDs. Since AlN has a closer lattice match to GaN compared to other heterogeneous passivation materials, we boosted the EQE of GaN-based green flip-chip mini-LEDs through the deposition of a lattice-compatible AlN passivation layer through atomic layer deposition (ALD) and a SiO
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