Evidence map›Paper›PMID 40648742›Full record

ArticleNanomaterials (Basel, Switzerland)2025

Barrier-Free Carrier Injection in 2D WSe

Tian-Jun Dai, Xiang Xiao, Zhong-Yuan Fan, Zi-Yan Zhang, Yi Zhou, Yong-Chi Xu, Jian Sun, Xue-Fei Liu

Abstract read
In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

8 authors.

Tian-Jun DaiSchool of Electronic Information Engineering, Guiyang University, Guiyang 550005, China.
Xiang XiaoSchool of Electronic Information Engineering, Guiyang University, Guiyang 550005, China.
Zhong-Yuan FanSchool of Electronic Information Engineering, Guiyang University, Guiyang 550005, China.
Zi-Yan ZhangSchool of Electronic Information Engineering, Guiyang University, Guiyang 550005, China.
Yi ZhouSchool of Electronic Information Engineering, Guiyang University, Guiyang 550005, China.
Yong-Chi XuSchool of Electronic Information Engineering, Guiyang University, Guiyang 550005, China.
Jian SunSchool of Electronic Information Engineering, Guiyang University, Guiyang 550005, China.
Xue-Fei LiuSchool of Physics and Electronic Science, Guizhou Normal University, Guiyang 550025, China.ORCID 0000-0003-0154-474X

Funding

the National Natural Science Foundation of China 62264001
6 · The paper itself

Abstract

Fermi-level pinning (FLP) at metal-semiconductor interfaces remains a key obstacle to achieving low-resistance contacts in two-dimensional (2D) transition metal dichalcogenide (TMDC)-based heterostructures. Here, we present a first-principles study of Schottky barrier formation in WSe

Indexed as

buffer layercarrier injection efficiencyFermi-level pinningSchottky barrier heightWSe2-MoSe2 heterostructure

Identifiers

PMID40648742
PMCPMC12250957

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.