Electronic Transport Properties in a One-Dimensional Sequence of Laser-Dressed Modified Pöschl-Teller Potentials.

Modifying the potential profiles in low-dimensional semiconductor heterostructures changes the confinement of particles, impacting the electronic transport properties. In this work, we study the electronic transport properties of a modified Pöschl-Teller double-barrier potential heterostructure of GaAs/AlGaAs, and for a similar double-barrier system including a Pöschl-Teller well between the barriers. For these two configurations, we calculated the current density-bias voltage characteristics, varying barrier and well half-width, the separation between barriers, and the depth of the central well. Additionally, the application of a non-resonant intense laser field. Our results show a redshift in the electronic transmission with increasing barrier separation, and a decrease in the area under the electronic transmission curve with the increase in the half-width of the barriers for both models. The characteristic current density-bias voltage curves in both models exhibit negative differential resistance, with tunable peaks that can be varied through changes in structural parameters and the external laser field.