Humidity Sensing in Graphene-Trenched Silicon Junctions via Schottky Barrier Modulation.

Akeel Qadir, Munir Ali, Afshan Khaliq, Shahid Karim, Umar Farooq, Hongsheng Xu, Yiting Yu

Abstract read

In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

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1citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

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3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

Spectroscopic and Electrical Insights into Humidity-Induced Modifications of Graphene Structures.ACS omega · 2026
Article

4 · The record

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PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

7 authors.

Akeel QadirSchool of Information Engineering, Xi'an Eurasia University, Xi'an 710065, China.ORCID 0000-0003-0358-6505

Munir AliLaboratory of Single-Photon Detection and Imaging Techniques, Zhejiang Engineering Research Center for Edge Intelligence Technology and Equipment, School of Information and Electrical Engineering, Zhejiang University City College, Hangzhou 310015, China.ORCID 0000-0002-9558-0946

Afshan KhaliqCollege of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua 321004, China.ORCID 0000-0002-5400-191X

Shahid KarimSchool of Information Engineering, Xi'an Eurasia University, Xi'an 710065, China.ORCID 0000-0001-9986-5052

Umar FarooqDepartment of Mechanical Engineering, University of Colorado Boulder, Boulder, CO 80309, USA.ORCID 0000-0002-5949-8945

Hongsheng XuIndustry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, Anhui 11 University, Hefei 230601, China.ORCID 0000-0002-6316-3347

Yiting YuResearch Center of Smart Sensing Chips, Ningbo Institute of Northwestern Polytechnical University, Ningbo 315103, China.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

In this study, we develop a graphene-trenched silicon Schottky junction for humidity sensing. This novel structure comprises suspended graphene bridging etched trenches on a silicon substrate, creating both free-standing and substrate-contacting regions of graphene that enhance water adsorption sensing. Suspended graphene is intrinsically insensitive to water adsorption, making it difficult for adsorbed H

Indexed as

graphene-trenched silicon Schottky junctionhumidity sensorrelative humiditysensitivity

Identifiers

PMID40648691

DOI10.3390/nano15130985

PMCPMC12251016

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.