Physical and Electrical Properties of Silicon Nitride Thin Films with Different Nitrogen-Oxygen Ratios.

Wen-Jie Chen, Yang-Chao Liu, Zhen-Yu Wang, Lin Gu, Yi Shen, Hong-Ping Ma

Abstract read

In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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0cells of the map it votes in

0citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

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0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

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5 · Who and what money

Authors and funding

6 authors.

Wen-Jie ChenInstitute of Wide Bandgap Semiconductor Materials and Devices, Research Institute of Fudan University in Ningbo, Ningbo 315327, China.

Yang-Chao LiuInstitute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, China.

Zhen-Yu WangInstitute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, China.

Lin GuInstitute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, China.

Yi ShenInstitute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, China.ORCID 0000-0003-4147-1944

Hong-Ping MaInstitute of Wide Bandgap Semiconductor Materials and Devices, Research Institute of Fudan University in Ningbo, Ningbo 315327, China.ORCID 0000-0003-4175-5437

Funding

National Natural Science Foundation of China No. 62474049the Joint Research Plan of sci-tech innovation community in Yangtze River Delta No.2023CSJG0600the National Key R&D Program of China 2023YFB4606300the Science and Technology Innovation Plan of Shanghai Science and Technology Commission No. 21DZ1100800 and 23ZR1405300

6 · The paper itself

Abstract

Silicon oxynitride (SiO

Indexed as

atomic ratiocapacitance–voltage testSiOxNy thin filmX-ray photoelectron spectroscopy (XPS)

Identifiers

PMID40648665

DOI10.3390/nano15130958

PMCPMC12251017

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.