ArticleMicrosystems & nanoengineering2025
Uncooled, broadband terahertz bolometers using SOI MEMS beam resonators with piezoresistive readout.
Article in Microsystems & nanoengineering, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
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Who cites it
2 citing papers in PubMed.
- Terahertz Antenna-Coupled Wire-Channel Field-Effect Transistors Based on AlGaN/GaN Heterostructures.Sensors (Basel, Switzerland) · 2026Article
- Enhanced Sensitivity of Sub-THz Thermomechanical Bolometers Exploiting Vibrational Nonlinearity.ACS photonics · 2026Article
Corrections and comments
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Authors and funding
9 authors.
Funding
Abstract
Terahertz (THz) detectors using MEMS resonators have attracted great interests owing to their high sensitivity, rapid response, and room-temperature operation capability. For easy integration with CMOS circuits, silicon (Si) based MEMS detectors are highly desirable. Here we report an uncooled THz bolometer using doubly-clamped Si on insulator (SOI) MEMS beam resonator with piezoresistive readout. When external heat is applied to the MEMS beam, the resonance frequency shifts owing to the thermal strain in the beam, demonstrating a thermal responsivity up to 149 W
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.