ArticleScience advances2025
Semiconductor-metal transition powers high-efficiency MgAgSb thermoelectrics.
Article in Science advances, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 7 papers.
What it found
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Who cites it
7 citing papers in PubMed.
- Magnesium-Retention Assisted Synthesis of High-Performance Zintl Thermoelectrics.Angewandte Chemie (International ed. in English) · 2026Article
- Scale-bridging interface design enables high-performance sustainable thermoelectrics.Nature communications · 2026Article
- Advances in Magnesium-Based Thermoelectrics: A Critical Review.Advanced materials (Deerfield Beach, Fla.) · 2026Review
- Article
- Synergistic Cu Doping and Yb Alloying Enhance Thermoelectric Performance of p-Type MgACS applied materials & interfaces · 2026Article
- Phase-controlled molecular beam deposition unlocks flexible MgAgSb thermoelectrics with exceptional performance.Nature communications · 2026Article
- Leveraging carrier mobility enables high-performance MgNational science review · 2026Article
Corrections and comments
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Authors and funding
8 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Because of the inferior thermoelectric performance of metals, the semiconductor-to-metal transition in thermoelectric materials is always avoided. Here, we demonstrate that α-to-β semiconductor-metal transition in MgAgSb is actually not detrimental but can be strategically exploited to create α/β-MgAgSb junction, enabling 150% enhancement in output power while maintaining high conversion efficiency. This power enhancement lies in the notably reduced internal resistance induced by semiconductor-to-metal transition, which is independent of dimensional changes. Consequently, α/β-MgAgSb can simultaneously achieve high maximum conversion efficiency exceeding 10% (9%) and maximum power density above 1 (0.9) W cm
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Registered trials
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