Investigation of key performance metrics in TiO

Brandon R Zink, William A Borders, Advait Madhavan, Brian D Hoskins, Jabez McClelland

Abstract read

In one paragraph

Article in Scientific reports, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it

0cells of the map it votes in

0citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

5 authors.

Brandon R ZinkPhysical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA. brandon.zink@nist.gov.

William A BordersPhysical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.

Advait MadhavanPhysical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.

Brian D HoskinsPhysical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.

Jabez McClellandPhysical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Resistive random-access memory (RRAM) is a promising beyond-CMOS technology due to its non-volatility, scalability, and high ON/OFF ratio. Furthermore, a single RRAM cell can operate as an analog resistor, meaning that it can be used in more novel computing applications such as tunable synapses in neuromorphic computing. However, issues of poor uniformity and poor yield persist in RRAM. In this work, we performed a systematic study on six different TiO

Identifiers

PMID40610558

DOI10.1038/s41598-025-07925-3

PMCPMC12229326

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.